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Volumn 111, Issue 2, 2012, Pages

Hexagonal-based pyramid void defects in GaN and InGaN

(10) Yankovich, A B a Kvit, A V a Li, X b Zhang, F b Avrutin, V b Liu, H Y b Izyumskaya, N b Ozgur U b Morkoc H b Voyles, P M a

a UNIVERSITY OF WISCONSIN MADISON (United States)

b Virginia Commonwealth University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATION-CORRECTED SCANNING TRANSMISSION ELECTRON MICROSCOPIES; CARBON DEPOSITION; GALLIUM NITRIDES (GAN); GROWTH DIRECTIONS; HEXAGONAL SYMMETRY; LATERAL OVERGROWTH; SPECTRUM IMAGING; VOID DEFECTS;

DEPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 84875179373 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3679540 Document Type: Article

Times cited : (15)

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