Nanotubes and pinholes in GaN and their formation mechanism

Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1659-1664

  Liliental Weber, Z ^a   Chen, Y ^b   Ruvimov, S ^a   Washburn, J ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); LATTICE CONSTANTS; NANOSTRUCTURED MATERIALS; NUCLEATION; REACTION KINETICS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031360193     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.1659     Document Type: Article

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