InGaN based light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p-GaN

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 5, 2011, Pages 1548-1551

  Liu, H Y ^a   Li, X ^a   Liu, S ^a   Ni, X ^a   Wu, M ^a   Avrutin, V ^a   Izyumskaya, N ^a   Ozgur U ^a   Yankovich, A B ^b   Kvit, A V ^b   Voyles, P M ^b   Morkoc H ^a  

^a Virginia Commonwealth University   (United States)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

Current crowding; GaN; GZO; Light emitting diodes

Indexed keywords

CURRENT CROWDING; CURRENT CROWDING EFFECT; CURRENT FILAMENTATION; CURRENT SPREADING; ELECTRICAL AND OPTICAL PROPERTIES; EXTERNAL QUANTUM EFFICIENCY; GA-DOPED ZNO; GAN; GZO; HIGH CURRENT DENSITIES; LIGHT OUTPUT; LIGHT OUTPUT DEGRADATION; PULSED MODE; SEMI-TRANSPARENT;

CURRENT DENSITY; DIODES; ELECTRIC PROPERTIES; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; OPTICAL PROPERTIES; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 79955591139     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000860     Document Type: Article

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