On the quantum efficiency of InGaN light emitting diodes: Effects of active layer design, electron cooler, and electron blocking layer

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 12, 2011, Pages 2907-2912

  Li, X ^a   Zhang, F ^a   Okur, S ^a   Avrutin, V ^a   Liu, S J ^a   Ozgur U ^a   Morkoc H ^a   Hong, S M ^b   Yen, S H ^b   Hsu, T S ^b   Matulionis, A ^c  

^a Virginia Commonwealth University   (United States)

^b EPISTAR CORPORATION   (Taiwan)

^c CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

double heterostructures; InGaN; quantum efficiency

Indexed keywords

ACTIVE LAYER; ACTIVE REGIONS; ALGAN; BARRIER HEIGHTS; BARRIER STRUCTURES; DOUBLE HETEROSTRUCTURES; ELECTRON BLOCKING LAYER; ELECTRON COOLERS; ELECTRON INJECTORS; ELECTRONS AND HOLES; EXTERNAL QUANTUM EFFICIENCY; INGAN; INGAN LED; INJECTED CARRIERS; INJECTION CURRENT DENSITY; INJECTION LEVELS; INTERNAL QUANTUM EFFICIENCY; LAYER THICKNESS; MATERIAL QUALITY; MOLE FRACTION; NON-RADIATIVE RECOMBINATIONS; QUANTUM WELL; RADIATIVE EFFICIENCY; SPATIAL SEPARATION; STAIR-CASE; TWO LAYERS;

EFFICIENCY; ELECTROLUMINESCENCE; ELECTRONS; FIELD EFFECT TRANSISTORS; GALLIUM; GALLIUM COMPOUNDS; HETEROJUNCTIONS; LASER EXCITATION; LIGHT EMITTING DIODES; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 82055208446     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127250     Document Type: Article

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