Low dislocation densities and long carrier lifetimes in GaN thin films grown on a Si Nx nanonetwork

Applied Physics Letters

Volumn 90, Issue 4, 2007, Pages

  Xie, J ^a   Ozgur U ^a   Fu, Y ^a   Ni, X ^a   Morko H ^a   Inoki, C K ^b   Kuan, T S ^b   Foreman, J V ^c   Everitt, H O ^c  

^a Virginia Commonwealth University   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

NONRADIATIVE CENTERS; ROOM TEMPERATURE; TIME-RESOLVED PHOTOLUMINESCENCE (TRPL);

THIN FILMS;

EID: 33846616464     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2433754     Document Type: Article

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