InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Applied Physics Letters

Volumn 97, Issue 3, 2010, Pages

  Ni, X ^a   Li, X ^a   Lee, J ^a   Liu, S ^a   Avrutin, V ^a   Ozgur U ^a   Morko H ^a   Matulionis, A ^b   Paskova, T ^c   Mulholland, G ^c   Evans, K R ^c  

^a Virginia Commonwealth University   (United States)

^b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^c KYMA TECHNOLOGIES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BLOCKING LAYERS; ELECTROLUMINESCENCE EFFICIENCIES; ELECTROLUMINESCENCE INTENSITY; ELECTRON BLOCKING LAYER; ELECTRON COOLERS; ELECTRON INJECTORS; ELECTRON OVERFLOW; ELECTRON THERMALIZATION; EXPERIMENTAL DATA; FIRST-ORDER; HIGH CURRENTS; QUASI-BALLISTIC ELECTRON TRANSPORT; THERMALIZATION;

DIODES; ELECTROLUMINESCENCE; ELECTRON INJECTION; HOT ELECTRONS; JET PUMPS; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; STAIRS;

ELECTRONS;

EID: 77956224340     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3465658     Document Type: Article

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