Investigations on the V-defect formation in GaInN-GaN multi quantum well structures

Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 529-532

  Off, J ^a   Scholz, F ^a   Fehrenbacher, E ^a   Gfrorer O ^a   Hangleiter, A ^a   Brockt, G ^b   Lakner, H ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033242982     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<529::AID-PSSB529>3.0.CO;2-8     Document Type: Article

References (8)

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