SCOPUS 정보 검색 플랫폼

Volumn 113, Issue 8, 2013, Pages

In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis

(5) Fujii, Takashi a,b,c Arita, Masashi a Hamada, Kouichi a Takahashi, Yasuo a Sakaguchi, Norihito a

a HOKKAIDO UNIVERSITY (Japan)

b JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE (Japan)

c HITACHI HIGH TECHNOLOGIES CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILAMENTS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; FORMING VOLTAGES; HIGH-RESISTANCE STATE; IN-SITU TRANSMISSION ELECTRON MICROSCOPIES; LOW-RESISTANCE STATE; RESISTANCE RANDOM ACCESS MEMORY; THERMAL OXIDIZATION;

ELECTRON EMISSION; INSTRUMENTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

IRIDIUM;

EID: 84874831803 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4792732 Document Type: Article

Times cited : (21)

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