Reram technology; challenges and prospects

IEICE Electronics Express

Volumn 9, Issue 8, 2012, Pages 795-807

  Akinaga, Hiro ^a   Shima, Hisashi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Electrochemical devices; Functional oxides; Nonvolatile memories; Redox reaction; Resistance switching

Indexed keywords

ELECTROCHEMICAL DEVICES; ELECTROCHEMICAL EFFECTS; EMERGING NON-VOLATILE MEMORIES; FUNCTIONAL OXIDES; NON-VOLATILE; NON-VOLATILE MEMORIES; OPERATION MECHANISM; RECENT PROGRESS; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY; TECHNICAL ASSESSMENT;

CONDENSED MATTER PHYSICS; ELECTRONICS ENGINEERING;

REDOX REACTIONS;

EID: 84864382891     PISSN: 13492543     EISSN: None     Source Type: Journal    
DOI: 10.1587/elex.9.795     Document Type: Article

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