Crystallinity improvement of ZnO thin film by hierarchical thermal annealing

Optical Materials Express

Volumn 3, Issue 2, 2013, Pages 295-306

  Wang, Hsiang Chen ^a   Liao, Che Hao ^b   Chueh, Yu Lun ^c   Lai, Chih Chung ^c   Chou, Po Ching ^a   Ting, Shao Ying ^b,d  

^a NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^d GENESIS PHOTONICS INC   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE FEATURE; CRYSTALLINE QUALITY; CRYSTALLINITIES; DIFFERENT LAYERS; HIGH QUALITY; HIGH TEMPERATURE; LOW TEMPERATURES; MGO; MGO BUFFER LAYER; NEAR BAND EDGE EMISSIONS; PHOTOLUMINESCENCE MEASUREMENTS; ROOT MEAN SQUARES; SAPPHIRE LATTICE; SAPPHIRE SUBSTRATES; SEM IMAGE; SMOOTH SURFACE; STRESS ACCUMULATION; THERMAL-ANNEALING; ZINC OXIDE (ZNO); ZNO; ZNO BUFFER LAYER; ZNO THIN FILM;

ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; FILM GROWTH; METALLIC FILMS; MOLECULAR BEAM EPITAXY; OPTICAL FILMS; SAPPHIRE; SURFACE ROUGHNESS; ZINC OXIDE;

ANNEALING;

EID: 84874146895     PISSN: None     EISSN: 21593930     Source Type: Journal    
DOI: 10.1364/OME.3.000295     Document Type: Article

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