Synthesis and characterization of ZnO/ZnMgO multiple quantum wells by molecular beam epitaxy

Optical Materials Express

Volumn 3, Issue 2, 2013, Pages 237-247

  Wang, Hsiang Chen ^a   Liao, Che Hao ^b   Chueh, Yu Lun ^c   Lai, Chih Chung ^c   Chen, Li His ^a   Tsiang, Raymond Chien Chao ^a  

^a NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; BLUE SHIFT; CONTROL SAMPLES; EMISSION PEAKS; EXCITON CONFINEMENT; HIGH-TEMPERATURE GROWTH; LIGHT EMISSION EFFICIENCY; LOW TEMPERATURES; MAGNESIUM CONCENTRATIONS; S SHAPE; SAPPHIRE SUBSTRATES; SINGLE QUANTUM WELL; SYNTHESIS AND CHARACTERIZATIONS; TEMPERATURE VARIATION; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; ZNMGO; ZNO; ZNO BUFFER LAYER; ZNO/ZNMGO;

BUFFER LAYERS; EPITAXIAL GROWTH; EXCITONS; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84874155973     PISSN: None     EISSN: 21593930     Source Type: Journal    
DOI: 10.1364/OME.3.000237     Document Type: Article

References (50)

1. D. C. Look, "Recent advances in ZnO materials and devices," Mater. Sci. Eng. B 80(1-3), 383-387 (2001).
2. D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto, "Optically pumped lasing of ZnO at room temperature," Appl. Phys. Lett. 70(17), 2230-2232 (1997).
3. T. Makino, Y. Segawa, and M. Kawasaki, "Analytical study on exciton - longitudinal - optical - phonon coupling and comparison with experiment for ZnO quantum wells," J. Appl. Phys. 97(10), 106111 (2005).
4. H. Long, G. Fang, S. Li, X. Mo, H. Wang, H. Huang, Q. Jiang, J. Wang, and X. Zhao, "A ZnO/ZnMgO multiple-quantum-well ultraviolet random laser diode," IEEE Electron Device Lett. 32(1), 54-56 (2011).
5. J. H. Lim, C. K. Kang, K. K. Kim, I. K. Park, D. K. Hwang, and S. J. Park, "UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering," Adv. Mater. 18(20), 2720-2724 (2006).
6. T. Makino, Y. Segawa, M. Kawasaki, and H. Koinuma, "Optical properties of excitons in ZnO-based quantum well heterostructures," Semicond. Sci. Technol. 20(4), S78-S91 (2005).
7. G. Coli and K. K. Bajaj, "Excitonic transitions in ZnO/MgZnO quantum well heterostructures," Appl. Phys. Lett. 78(19), 2861-2863 (2001).
8. T. Makino, Y. Segawa, M. Kawasaki, A. Ohtomo, R. Shiroki, K. Tamura, T. Yasuda, and H. Koinuma, "Band gap engineering based on MgxZn1-xO and CdyZn1-yO ternary alloy films," Appl. Phys. Lett. 78(9), 1237-1239 (2001).
9. T. Gruber, C. Kirchner, R. Kling, F. Reuss, A. Waag, F. Bertram, D. Forster, J. Christen, and M. Schreck, "Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy," Appl. Phys. Lett. 83(16), 3290-3292 (2003).
10. V. A. Coleman, M. Buda, H. H. Tan, C. Jagadish, M. R. Phillips, K. Koike, S. Sasa, M. Inoue, and M. Yano, "Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixing," Semicond. Sci. Technol. 21(3), L25-L28 (2006).
11. xO(0 ≤ x ≤ 0.49) thin films," Appl. Phys. Lett. 79(13), 2022-2024 (2001).
12. M. Brandt, H. Wenckstern, M. Stölzel, H. Hochmuth, M. Lorenz, and M. Grundmann, "Semiconducting oxide heterostructures," Semicond. Sci. Technol. 26(1), 014040 (2011).
13. R. Thierry, G. Perillat-Merceroz, P. H. Jouneau, P. Ferret, and G. Feuillet, "Core-shell multi-quantum wells in ZnO/ZnMgO nanowires with high optical efficiency at room temperature," Nanotechnology 23(8), 085705 (2012).
14. X. Q. Gu, L. P. Zhu, Z. Z. Ye, H. P. He, Y. Z. Zhang, F. Huang, M. X. Qiu, Y. J. Zeng, F. Liu, and W. Jaeger, "Room-temperature photoluminescence from ZnO/ZnMgO multiple quantum wells grown on Si(111) substrates," Appl. Phys. Lett. 91(2), 022103 (2007).
15. T. Makino, C. H. Chia, N. T. Tuan, H. D. Sun, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, "Room-temperature luminescence of excitons in ZnO/(Mg,Zn) O multiple quantum wells on lattice-matched substrates," Appl. Phys. Lett. 77(7), 975-977 (2000).
16. C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, and J. A. Davis, "Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field," Appl. Phys. Lett. 96(19), 193117 (2010).
17. R. A. Arif, Y.-K. Ee, and N. Tansu, "Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes," Appl. Phys. Lett. 91(9), 091110 (2007).
18. H. P. Zhao, G. Y. Liu, X. H. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, "Design and characteristics of staggered InGaN quantum well light-emitting diodes in the green spectral regimes," IET Optoelectron. 3(6), 283-295 (2009).
19. H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, "Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells," Opt. Express 19(S4 Suppl 4), A991-A1007 (2011).
20. M. Brandt, M. Lange, M. Stölzel, A. Müller, G. Benndorf, J. Zippel, J. Lenzner, M. Lorenz, and M. Grundmann, "Control of interface abruptness of polar MgZnO/ZnO quantum wells grown by pulsed laser deposition," Appl. Phys. Lett. 97(5), 052101 (2010).
21. J. Zhang, H. Zhao, and N. Tansu, "Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers," Appl. Phys. Lett. 97(11), 111105 (2010).
22. J. Zhang, H. Zhao, and N. Tansu, "Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes," Appl. Phys. Lett. 98(17), 171111 (2011).
23. Y. Taniyasu and M. Kasu, "Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices," Appl. Phys. Lett. 99(25), 251112 (2011).
24. E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, "Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations," Appl. Phys. Lett. 100(6), 061111 (2012).
25. G. Liu, J. Zhang, X. H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. Zhao, and N. Tansu, "Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates," J. Cryst. Growth 340(1), 66-73 (2012).
26. R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Growth study and ipurity characterization of AlxIn1-xN grown by metal organic chemical vapor deposition," J. Cryst. Growth 324(1), 163-167 (2011).
27. J. G. Kim, S. K. Han, S. M. Yang, S. K. Hong, J. W. Lee, J. Y. Lee, J. H. Song, Y. E. Ihm, D. Kim, J. S. Park, H. J. Lee, and T. Yao, "Effects of low temperature ZnO and MgO buffer thicknesses on properties of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular beam epitaxy," Thin Solid Films 519(1), 223-227 (2010).
28. A. Bakin, J. Kioseoglou, B. Pecz, A. El-Shaer, A.-C. Mofor, J. Stoemenos, and A. Waag, "Misfit reduction by a spinel layer formed during the epitaxial growth of ZnO on sapphire using a MgO buffer layer," J. Cryst. Growth 308(2), 314-320 (2007).
29. Y. Chen, H. J. Ko, S. K. Hong, and T. Yao, "Layer-by-layer growth of ZnO epilayer on Al2O3 (0001) by using a MgO buffer layer," Appl. Phys. Lett. 76(5), 559-561 (2000).
30. Y. Chen, S. K. Hong, H. J. Ko, V. Kirshner, H. Wenisch, T. Yao, K. Inaba, and Y. Segawa, "Effects of an extremely thin buffer on heteroepitaxy with large lattice mismatch," Appl. Phys. Lett. 78(21), 3352-3354 (2001).
31. H. Kato, K. Miyamoto, M. Sano, and T. Yao, "Polarity control of ZnO on sapphire by varying the MgO buffer layer thickness," Appl. Phys. Lett. 84(22), 4562-4564 (2004).
32. Y. J. Chen, Y. Y. Shih, C. H. Ho, J. H. Du, and Y. P. Fu, "Effect of temperature on lateral growth of ZnO grains grown by MOCVD," Ceram. Int. 36(1), 69-73 (2010).
33. S. Y. Ting, P. J. Chen, H. C. Wang, C. H. Liao, W. M. Chang, Y. P. Hsieh, and C. C. Yang, "Crystallinity improvement of ZnO thin film on different buffer layers grown by MBE," J. Nanomater. 2012, 6 (2012), doi:10.1155/2012/929278.
34. K. Koike, G. Y. Takada, K. Fujimoto, S. Sasa, M. Inoue, and M. Yano, "Characterization of [ZnO]m[ZnMgO]n multiple quantum wells grown by molecular beam epitaxy," Physica E 32(1-2), 191-194 (2006).
35. S. Y. O, C.-G. Lee, A. J. Shapiro, W. F. Egelhoff, M. D. Vaudin, J. L. Ruglovsky, J. Mallett, and P. W. T. Pong, "X-ray diffraction study of the optimization of MgO growth conditions for magnetic tunnel junctions," J. Appl. Phys. 103(7), 07A920 (2008).
36. 1-xO as a II-VI widegap semiconductor alloy," Appl. Phys. Lett. 72(19), 2466-2468 (1998).
37. 3 by radical-source molecular beam epitaxy," Superlattices Microstruct. 42(1-6), 129-133 (2007).
38. 0.630.63O (0001) layers towards multi-quantum-wells," J. Appl. Phys. 99(2), 024902 (2006).
39. 0.3O/ZnO heterostructure field-effect transistor grown on sapphire substrate by molecular-beam epitaxy," Appl. Phys. Lett. 87(11), 112106 (2005).
40. T. Gruber, C. Kirchner, R. Kling, F. Reuss, and A. Waag, "ZnMgO epilayers and ZnO-ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region," Appl. Phys. Lett. 84(26), 5359-5361 (2004).
41. T. Makino, K. Tamura, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, and H. Koinuma, "Effect of MgZnO-layer capping on optical properties of ZnO epitaxial layers," Appl. Phys. Lett. 81(12), 2172-2174 (2002).
42. D. Sun, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, "Phonon replicas in ZnO/ZnMgO multiquantum wells," J. Appl. Phys. 91(10), 6457-6460 (2002).
43. Y. Chen, F. Jiang, L. Wang, C. Zheng, J. Dai, Y. Pu, and W. Fang, "Structural and luminescent properties of ZnO epitaxial film grown on Si(111) substrate by atmospheric-pressure MOCVD," J. Cryst. Growth 275(3-4), 486-491 (2005).
44. 0.37Zn0.63O (0001) layers towards multi-quantum-wells," J. Appl. Phys. 99(2), 024902 (2006).
45. M. Shimizu, Y. Kawaguchi, K. Hiramatsu, and N. Sawaki, "Metalorganic vapor phase epitaxy of thick InGaN on sapphire substrate," Jpn. J. Appl. Phys. Part 1 36(Part 1, No. 6A), 3381-3384 (1997).
46. S. Pereira, M. R. Correia, E. Pereira, C. Trager-Cowan, F. Sweeney, K. P. O'Donnell, E. Alves, N. Franco, and A. D. Sequeira, "Structural and optical properties of InGaN/GaN layers close to the critical layer thickness," Appl. Phys. Lett. 81(7), 1207-1209 (2002).
47. T. Sugahara, M. Hao, T. Wang, D. Nakagawa, Y. Naoi, K. Nishino, and S. Sakai, "Role of dislocation in InGaN phase separation," Jpn. J. Appl. Phys. Part 2 37(Part 2, No. 10B), L1195-L1198 (1998).
48. T. Makino, N. T. Tuan, H. D. Sun, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, T. Suemoto, H. Akiyama, M. Baba, S. Saito, T. Tomita, and H. Koinuma, "Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg,Zn)O multiple quantum wells," Appl. Phys. Lett. 78(14), 1979-1981 (2001).
49. K. Wu, H. He, Y. Lu, J. Huang, and Z. Ye, "Dominant free exciton emission in ZnO nanorods," Nanoscale 4(5), 1701-1706 (2012).
50. A. Bakin, J. Kioseoglou, B. Pecz, A. El-Shaer, A.-C. Mofor, J. Stoemenos, and A. Waag, "Misfit reduction by a spinel layer formed during the epitaxial growth of ZnO on sapphire using a MgO buffer layer," J. Cryst. Growth 308(2), 314-320 (2007).