Effects of annealing of MgO buffer layer on structural quality of ZnO layers grown by P-MBE on c-sapphire

Materials Science in Semiconductor Processing

Volumn 6, Issue 5-6, 2003, Pages 371-374

  Setiawan, A ^a   Ko, H J ^b   Yao, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

Author keywords

Plasma assisted MBE; ZnO

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); MAGNESIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

PLASMA-ASSISTED MBE; ZNO;

CRYSTAL GROWTH FROM MELT;

EID: 1642634099     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2003.05.002     Document Type: Conference Paper

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