Study on MgO buffer in ZnO layers grown by plasma-assisted molecular beam epitaxy on Al2O3(0001)

Thin Solid Films

Volumn 445, Issue 2, 2003, Pages 213-218

  Setiawan, Agus ^a   Ko, Hang Ju ^b   Hong, Soon Ku ^c   Chen, Yefan ^d   Yao, Takafumi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

^c Chungnam National University   (South Korea)

^d LUCENT TECHNOLOGIES   (United States)

Author keywords

Annealing; MgO buffer; Molecular beam epitaxy; ZnO

Indexed keywords

ANNEALING; CRYSTAL LATTICES; INTERFACIAL ENERGY; MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; ULTRASONICS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

MGO BUFFER; PHOTONIC MATERIALS;

ALUMINA;

EID: 1642363091     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)01163-5     Document Type: Conference Paper

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