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Journal of Electronic Materials

Volumn 41, Issue 7, 2012, Pages 1962-1969

RF power effect on the properties of sputtered ZnO films for channel layer applications in thin-film transistors

(5) Medina Montes, M I a Arizpe Chavez H b Baldenegro Perez L A c Quevedo Lopez M A c Ramirez Bon R a

a DEPARTAMENTO DE FÍSICA (Mexico)

b UNIVERSIDAD DE SONORA (Mexico)

c The University of Texas at Dallas (United States)

Author keywords

Highly resistive zinc oxide films; magnetron sputtering; RF power; thin film transistor

Indexed keywords

ACTIVE CHANNEL LAYERS; AFM; ARGON GAS; CHANNEL LAYERS; DEPOSITION POWER; DEVICE PERFORMANCE; ELECTRICAL CHARACTERISTIC; ELECTRICAL RESISTIVITY; EXPERIMENTAL TECHNIQUES; FIELD-EFFECT MOBILITIES; GRAIN SIZE; HEXAGONAL WURTZITE; POLYCRYSTALLINE STRUCTURE; PREFERRED ORIENTATIONS; RADIO FREQUENCY MAGNETRON SPUTTERING; RF-POWER; ROOM TEMPERATURE; ROOT MEAN SQUARES; ZNO FILMS;

ARGON; ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; MAGNETRON SPUTTERING; OXIDE FILMS; REFRACTIVE INDEX; SEMICONDUCTING ORGANIC COMPOUNDS; STRUCTURE (COMPOSITION); SURFACE ROUGHNESS; THIN FILM TRANSISTORS; ZINC OXIDE; ZINC SULFIDE;

METALLIC FILMS;

EID: 84862192191 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-012-1994-9 Document Type: Article

Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.