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Volumn 308, Issue 2, 2007, Pages 314-320

Misfit reduction by a spinel layer formed during the epitaxial growth of ZnO on sapphire using a MgO buffer layer

Author keywords

A1. Interfaces; A1. Transmission electron microscopy; A3. Molecular beam epitaxy; B2. Semiconducting II VI materials

Indexed keywords

ANNEALING; BUFFER LAYERS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; MAGNESIA; MOLECULAR BEAM EPITAXY; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

EID: 35348865516     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.08.012     Document Type: Article
Times cited : (19)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.