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Current Applied Physics

Volumn 12, Issue 5, 2012, Pages 1381-1385

Effect of oxygen partial pressure and annealing on nanocrystalline p-type ZnO:Sb thin films

(5) Samanta, K a Arora, A K a Hussain, S b Chakravarty, S b Katiyar, R S c

a INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH (India)

b UGC DAE CSR (India)

c UNIVERSITY OF PUERTO RICO (Puerto Rico)

Author keywords

Defect states; p Type ZnO; Photoluminescence; Thin films

Indexed keywords

DEFECT STATE; EFFECT OF OXYGEN; NANOCRYSTALLINES; OXYGEN PRESSURE; P TYPE ZNO; P-TYPE; P-TYPE CONDUCTIVITY; SB-DOPED; STRONG CORRELATION; VIOLET EMISSION; WORKING PRESSURES; ZNO THIN FILM;

CARRIER CONCENTRATION; PARTIAL PRESSURE; PHOTOLUMINESCENCE; POSITIVE IONS; PULSED LASER DEPOSITION; THIN FILMS; ZINC OXIDE;

ANNEALING;

EID: 84861577287 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2012.04.001 Document Type: Article

Times cited : (18)

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