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Applied Physics Letters

Volumn 97, Issue 15, 2010, Pages

Effect of GaN interlayer on polarity control of epitaxial ZnO thin films grown by molecular beam epitaxy

(3) Wang, X Q a Sun, H P b Pan, X Q b

a PEKING UNIVERSITY (China)

b UNIVERSITY OF MICHIGAN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC STRUCTURE; GAN LAYERS; NITRIDED; POLARITY CONTROL; RF PLASMA; SAPPHIRE SUBSTRATES; STRUCTURAL QUALITIES; ZNO; ZNO BUFFER LAYER; ZNO THIN FILM;

EPILAYERS; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL FILMS; PLASMA APPLICATIONS; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 77958107352 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3502607 Document Type: Article

Times cited : (10)

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