Effect of temperature on lateral growth of ZnO grains grown by MOCVD

Ceramics International

Volumn 36, Issue 1, 2010, Pages 69-73

  Chen, Y J ^a,b   Shih, Y Y ^a,b   Ho, C H ^a,b   Du, J H ^a,b   Fu, Y P ^a,b  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

^b Graduate Institute of Optoelectronics Engineering   (Taiwan)

Author keywords

A. Films; A. Grain growth; D. ZnO; Metal organic chemical vapor deposition

Indexed keywords

A. FILMS; A. GRAIN GROWTH; CRYSTAL ALIGNMENT; CRYSTALLOGRAPHIC ORIENTATIONS; D. ZNO; DIMETHYLZINC; EFFECT OF TEMPERATURE; GROWTH METHOD; HIGHER TEMPERATURES; LATERAL GROWTH; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; NUCLEATION AND GROWTH; OXYGEN PRECURSORS; TEMPERATURE VARIATION; TWO-STEP GROWTH; WELL-ALIGNED; ZNO; ZNO FILMS;

ALIGNMENT; COALESCENCE; CORUNDUM; FILM GROWTH; GRAIN SIZE AND SHAPE; INDUSTRIAL CHEMICALS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; OXYGEN; SEMICONDUCTING ZINC COMPOUNDS; TEMPERATURE; THERMAL EFFECTS; ZINC; ZINC OXIDE;

GRAIN GROWTH;

EID: 70350710162     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2009.06.018     Document Type: Article

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