Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer

Journal of Applied Physics

Volumn 100, Issue 10, 2006, Pages

  Pcz B ^a   El Shaer, A ^b   Bakin, A ^b   Mofor, A C ^b   Waag, A ^b   Stoemenos, J ^c  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

EPITAXIAL LAYER; THREADING DISLOCATIONS;

THIN FILMS;

EID: 33845192916     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2382669     Document Type: Article

References (28)

1. H. J. Queisser and E. E. Haller, Science 281, 945 (1998).
2. D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto, Appl. Phys. Lett. 70, 2230 (1997).
3. D. C. Look, D. C. Reynolds, J. W. Hemsky, R. L. Jones, and J. R. Sizelove, Appl. Phys. Lett. 75, 811 (1999).
4. Eagle-Picher Technologies, L. L. C., 200 B. J. Tunnell, Miami, OK 74354, USA.
5. D. C. Look, Mater. Sci. Eng., B 80, 383 (2001).
6. Y. Chen, D. M. Bagnall, H.-J. Ko, K.-T. Park, K. Hiraga, Z. Zhu, and T. Yao, J. Appl. Phys. 84, 3912 (1998).
7. F. Vigú, P. Venńgús, C. Deparis, S. V́zian, M. Laügt, and J.-P. Faurie, J. Appl. Phys. 90, 5115 (2001).
8. D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto, Appl. Phys. Lett. 70, 2230 (1997).
9. D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, M. Y. Shen, and T. Goto, Appl. Phys. Lett. 73, 1038 (1998).
10. A. El-Shaer, A. Che Mofor, A. Bakin, M. Kreye, and A. Waag, Superlattices Microstruct. 38, 265 (2005).
11. A. Bakin, A. El-Shaer, A. Che Mofor, M. Kreye, A. Waag, F. Bertram, J. Christen, and J. Stoimenos, J. Cryst. Growth 287, 7 (2006).
12. A. El-Shaer, Appl. Phys. A: Mater. Sci. Process. (in press).
13. A. El Shaer, Phys. Status Solidi B 243, 768 (2006).
14. Y. Chen, H.-J. Ko, S.-K. Hong, T. Yao, and Y. Segawa, J. Cryst. Growth 214/215, 87 (2000).
15. Y. Chen, S.-K. Hong, H.-J. Ko, V. Kirshner, H. Wenisch, T. Yao, K. Inaba, and Y. Segawa, Appl. Phys. Lett. 78, 3352 (2001).
16. A. Setiawan, H.-J. Ko, S.-K. Hong, Y. Chen, and T. Yao, Thin Solid Films 445, 213 (2003).
17. S. Sadofev, S. Blumstengel, J. Cui, J. Puls, S. Rogaschewski, P. Schäfer, Yu. G. Sadofyev, and F. Henneberger, Appl. Phys. Lett. 87, 091903 (2005).
18. J. Narayan and B. C. Larson J. Appl. Phys. 93, 278 (2003).
19. J. W. Mattews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
20. A. Fischer, H Kühne, and H. Richter, Phys. Rev. Lett. 73, 2712 (1994).
21. J. F. Sarver, F. L. Katnack, and F. A. Hummel, J. Electrochem. Soc. 106, 960 (1959).
22. A. Ohtomo, Appl. Phys. Lett. 72, 2466 (1998).
23. A. Ohtomo, R. ShirokiI, I. Ohkubo, H. Koinuma, and M. Kawasaki, Appl. Phys. Lett. 75, 4066 (1999).
24. S. Kaiser, H. Preis, W. Gebhardt, O. Ambacher, H. Angerer, M. Stutzmann, A. Rosenauer, and D. Gerthsen, Jpn. J. Appl. Phys., Part 1 37 84 (1998).
25. P. B. Hirsch, A. Howie, R. B. Nicholson, D. W. Pashley, and M. J. Whelan, Electron Microscopy of Thin Crystals (Butterworths, London, 1965), pp. 343-378.
26. J. H. van der Merwe, J. Appl. Phys. 34, 117 (1963).
27. P. M. J. Maŕe, J. C. Barbour, J. F. van der Veen, K. L. Kavanagh, C. W. T. Bull-Lieuwma, and M. P. A. Viegers, J. Appl. Phys. 62, 4412 (1987).
28. D. Gerthsena, D. Litvinov, Th. Gruber, C. Kirchner, and A. Waag, Appl. Phys. Lett. 21, 3972 (2001).