Low-pressure chemical vapour deposition growth of high-quality ZnO films on epi-GaN/α-Al2O3

Journal of Physics Condensed Matter

Volumn 13, Issue 9, 2001, Pages

  Ataev, B M ^a   Lundin, W V ^b   Mamedov V, V ^a   Bagamadova, A M ^a   Zavarin, E E ^b  

^a INSTITUTE OF PHYSICS   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SPECTRUM ANALYSIS; X RAY ANALYSIS; ZINC OXIDE;

HETEROSTRUCTURE FABRICATION;

METALLIC FILMS;

EID: 0035809621     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/13/9/103     Document Type: Article

References (8)