Polarity control of ZnO on sapphire by varying the MgO buffer layer thickness

Applied Physics Letters

Volumn 84, Issue 22, 2004, Pages 4562-4564

  Kato, Hiroyuki ^a   Miyamoto, Kazuhiro ^a   Sano, Michihiro ^a   Yao, Takafumi ^b  

^a STANLEY ELECTRIC CO LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; CRYSTAL ORIENTATION; ELECTRON DIFFRACTION; FILM GROWTH; LATTICE CONSTANTS; PLASMAS; SOLUTIONS; TRANSMISSION ELECTRON MICROSCOPY; ULTRASONIC CLEANING; WETTING;

CONVERGENT BEAM ELECTRON TRANSMISSION (CBED); DANGLING MODES; POLARITY CONVERSION; WETTING LAYERS;

MOLECULAR BEAM EPITAXY;

EID: 3042778597     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1759377     Document Type: Article

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