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Volumn 29, Issue 2, 2013, Pages 128-136

MOVPE Growth of InxGa1-xN (x ~ 0.4) and Fabrication of Homo-junction Solar Cells

Author keywords

Doping; Film quality; Growth; InGaN; Metal organic vapor phase epitaxy (MOVPE); P n junction

Indexed keywords

CRYSTALLINE QUALITY; FILM QUALITY; GAN TEMPLATE; GROWTH PARAMETERS; HOMOJUNCTION; INDIUM GALLIUM NITRIDE; INGAN; LIGHT ILLUMINATION; METAL-ORGANIC VAPOR PHASE EPITAXY; MOLAR RATIO; MOVPE GROWTH; P-N JUNCTION; SOLAR PHOTONS; THERMAL EXPANSION COEFFICIENTS; TRIETHYL GALLIUMS; TRIMETHYLINDIUM;

EID: 84873522459     PISSN: 10050302     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmst.2012.12.005     Document Type: Article
Times cited : (33)

References (52)
  • 31
    • 84857431249 scopus 로고    scopus 로고
    • Development of Wide-Band Gap InGaN Solar Cells for High-Efficiency Photovoltaics
    • Ph.D. thesis, Georgia Institute of Technology, Atlanta, Georgia
    • O.K. Jani, Development of Wide-Band Gap InGaN Solar Cells for High-Efficiency Photovoltaics, Ph.D. thesis, Georgia Institute of Technology, Atlanta, Georgia, 2008.
    • (2008)
    • Jani, O.K.1
  • 32
    • 84873522715 scopus 로고    scopus 로고
    • Optical, Structural, and Transport Properties of InN, InxGa1-xN Alloys Grown by Metalorganic Chemical Vapor Deposition
    • Ph.D. thesis, Kansas State University, Manhattan, Kansas
    • N. Khan, Optical, Structural, and Transport Properties of InN, InxGa1-xN Alloys Grown by Metalorganic Chemical Vapor Deposition, Ph.D. thesis, Kansas State University, Manhattan, Kansas, 2009.
    • (2009)
    • Khan, N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.