Mg doping behavior of MOVPE InxGa1-xN (x∼0.4)

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2817-2820

  Islam, Md Rafiqul ^a   Sugita, K ^a   Horie, M ^a   Hashimoto, A ^a   Yamamoto, A ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

A1. Diffusion; A1. Doping; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

A1. DIFFUSION; A1. DOPING; A3. METALORGANIC VAPOR-PHASE EPITAXY; B1. NITRIDES; CRYSTALLINE QUALITY; DONOR CONCENTRATIONS; INDIUM GALLIUM NITRIDE; LOW ACTIVATION; MEMORY EFFECTS; MG-DOPING; MOVPE; NON-DOPED; P-TYPE; P-TYPE CONDUCTION;

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; FLOW RATE; GALLIUM ALLOYS; GALLIUM NITRIDE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; VAPORS;

DOPING (ADDITIVES);

EID: 65749098057     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.015     Document Type: Article

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