Study of indium droplets formation on the InxGa1-xN films by single crystal X-ray diffraction

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 281-284

  Lu, Hongqiang ^a   Thothathiri, Malathi ^a   Wu, Ziming ^a   Bhat, Ishawara ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Indium gallium nitride (InxGa1 xN); Metalorganic chemical vapor deposition (MOCVD); Photoluminescence (PL); Single crystal x ray diffraction

Indexed keywords

EID: 0004735929     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0164-y     Document Type: Article

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