Thermodynamic study on phase separation during MOVPE growth of InxGa1 - xN

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 13-18

  Koukitu, Akinori ^a   Seki, Hisashi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Compositional inhomogeneity; InGaN; MOVPE; Phase separation; Thermodynamic

Indexed keywords

FREE ENERGY; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHASE COMPOSITION; PHASE DIAGRAMS; PHASE SEPARATION; SEMICONDUCTOR GROWTH;

COMPOSITIONAL INHOMOGENEITY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032093260     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00147-X     Document Type: Article

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