MOVPE growth of high quality p-type InGaN with intermediate in compositions

Journal of Crystal Growth

Volumn 318, Issue 1, 2011, Pages 492-495

  Sasamoto, K ^a   Hotta, T ^a   Sugita, K ^a   Bhuiyan, A G ^a   Hashimoto, A ^a   Yamamoto, A ^a   Kinoshita, K ^b   Kohji, Y ^b  

^a UNIVERSITY OF FUKUI   (Japan)

^b KANSAI ELECTRIC POWER CO   (Japan)

Author keywords

A1. Doping; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting IIIV materials

Indexed keywords

A1. DOPING; A3. METALORGANIC VAPOR PHASE EPITAXY; B1. NITRIDES; COMPOSITION CONTROL; CRYSTALLINE QUALITY; GAN/SAPPHIRE; HIGH QUALITY; MG-DOPING; MOLAR RATIO; MOVPE GROWTH; P-TYPE; P-TYPE CONDUCTION; SEMI CONDUCTING III-V MATERIALS;

CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; GALLIUM NITRIDE; GROWTH TEMPERATURE; METALLORGANIC VAPOR PHASE EPITAXY; PHASE SEPARATION; SEMICONDUCTOR GROWTH; VAPORS;

SEMICONDUCTOR DOPING;

EID: 79952736390     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.10.217     Document Type: Conference Paper

References (10)

1. A. Yamamoto, M.R. Islam, T.T. Kang, and A. Hashimoto Phys. Status Solidi C 7 2010 1309
2. A. Yamamoto, N. Nakagawa, T. Sugiura, and A. Hashimoto Phys. Status Solidi A 176 1999 237
3. C. Chang, T. Tang, P. Chang, N. Chen, and C. Liang Jpn. J. Appl. Phys. 46 2007 2840
4. K. Kumakura, T. Makimoto, and N. Kobayashi Jpn. J. Appl. Phys. 39 2000 L195
5. M. Horie, K. Sugita, A. Hashimoto, and A. Yamamoto Sol. Energy Mater. Sol. Cells 93 2009 1013
6. Md.R. Islam, K. Sugita, M. Horie, A. Hashimoto, and A. Yamamoto J. Cryst. Growth 311 2009 2817
7. B.N. Pantha, A. Sedhain, J. Li, J.Y. Lin, and H.X. Jiang Appl. Phys. Lett. 95 2009 261904
8. Md.R. Islam, K. Sasamoto, A. Yamamoto, unpublished data.
9. A. Yamamoto, K. Sugita, and A. Hashimoto J. Cryst. Growth 311 2009 4636
10. H. Tokunaga, I Waki, A. Yamaguchi, N. Akutsu, and K. Matsumoto J. Cryst. Growth 189/190 1998 519 522