-
1
-
-
4244203187
-
Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap
-
0370-1972
-
Davydov, V.Yu., Klochikhin, A.A., Seisyan, R.P., Emtsev, V.V., Ivanov, S.V., Bechstedt, F., Furthmuller, J., Harima, H., Mudryi, A.V., Aderhold, J., Semchinova, O., and Garul, J.: ' Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap ', Phys. Status Solidi B, 2002, 229, (3), p. R1-R3 0370-1972
-
(2002)
Phys. Status Solidi B
, vol.229
, Issue.3
-
-
Davydov, V.Yu.1
Klochikhin, A.A.2
Seisyan, R.P.3
Emtsev, V.V.4
Ivanov, S.V.5
Bechstedt, F.6
Furthmuller, J.7
Harima, H.8
Mudryi, A.V.9
Aderhold, J.10
Semchinova, O.11
Garul, J.12
-
2
-
-
79956030105
-
Unusual properties of the fundamental band gap of InN
-
0021-8979
-
Wu, J., Walukiewicz, W., Shan, W., Yu, K.M., Ager, J.W., Li, S.X., Haller, E.E., Lu, H., and Schaff, W.J.: ' Unusual properties of the fundamental band gap of InN ', J. Appl. Phys., 2003, 80, p. 3967-3969 0021-8979
-
(2003)
J. Appl. Phys.
, vol.80
, pp. 3967-3969
-
-
Wu, J.1
Walukiewicz, W.2
Shan, W.3
Yu, K.M.4
Ager, J.W.5
Li, S.X.6
Haller, E.E.7
Lu, H.8
Schaff, W.J.9
-
3
-
-
79955992797
-
Optical bandgap energy of urtzite InN
-
10.1063/1.1499753 0003-6951
-
Matsuoka, T., Okamoto, H., Nakao, M., Harima, H., and Kurimoto, E.: ' Optical bandgap energy of urtzite InN ', Appl. Phys. Lett., 2007, 81, p. 1246 10.1063/1.1499753 0003-6951
-
(2007)
Appl. Phys. Lett.
, vol.81
, pp. 1246
-
-
Matsuoka, T.1
Okamoto, H.2
Nakao, M.3
Harima, H.4
Kurimoto, E.5
-
4
-
-
41749092958
-
50 efficient solar cell architectures and designs
-
4th, Waikoloa, HI, USA
-
Barnett, A., Honsberg, C., Kirkpatrick, D., Kurtz, S., Moore, D., Salzman, D., Schwartz, R., Gray, J., Bowden, S., Goossen, K., Haney, M., Aiken, D., Wanlass, M., and Emery, K.: ' 50 efficient solar cell architectures and designs ', 4th, World Conf. on Photovoltaic Energy Conversion, Waikoloa, HI, USA, 2006, p. 2560
-
(2006)
World Conf. on Photovoltaic Energy Conversion
, pp. 2560
-
-
Barnett, A.1
Honsberg, C.2
Kirkpatrick, D.3
Kurtz, S.4
Moore, D.5
Salzman, D.6
Schwartz, R.7
Gray, J.8
Bowden, S.9
Goossen, K.10
Haney, M.11
Aiken, D.12
Wanlass, M.13
Emery, K.14
-
5
-
-
17644370007
-
Theoretical possibilities of InxGa1-xN tandem PV structures
-
0927-0248
-
Hamzaoui, H., Bouazzi, A.S., and Rezig, B.: ' Theoretical possibilities of InxGa1-xN tandem PV structures ', Sol. Energy Mater. Sol. Cells, 2005, 87, p. 595-603 0927-0248
-
(2005)
Sol. Energy Mater. Sol. Cells
, vol.87
, pp. 595-603
-
-
Hamzaoui, H.1
Bouazzi, A.S.2
Rezig, B.3
-
6
-
-
0031551651
-
Absorption coefficient, energy gap, exciton binding energy,and recombination lifetime of GaN obtained from transmission measurements
-
0003-6951
-
Muth, J.F., Lee, J.H., Shmagin, I.K., Kolbas, R.M., Casey, H.C., Keller, B.P., Mishra, U.K., and DenBaars, S.P.: ' Absorption coefficient, energy gap, exciton binding energy,and recombination lifetime of GaN obtained from transmission measurements ', Appl. Phys. Lett., 1997, 71, p. 2572-2574 0003-6951
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 2572-2574
-
-
Muth, J.F.1
Lee, J.H.2
Shmagin, I.K.3
Kolbas, R.M.4
Casey, H.C.5
Keller, B.P.6
Mishra, U.K.7
Denbaars, S.P.8
-
7
-
-
0038711780
-
R-F molecular beam epitaxy growth and properties of InN and related alloys
-
Nanishi, Y., Saito, Y., and Yamaguchi, T.: ' R-F molecular beam epitaxy growth and properties of InN and related alloys ', Jpn. J. Appl. Phys. 1, 2003, 42, p. 2549
-
(2003)
Jpn. J. Appl. Phys. 1
, vol.42
, pp. 2549
-
-
Nanishi, Y.1
Saito, Y.2
Yamaguchi, T.3
-
8
-
-
34848905285
-
Design, and characterization of GaN/InGaN solar cells
-
0003-6951
-
Jani, O., Ferguson, I., Honsberg, C., and Kurtz, S.: ' Design, and characterization of GaN/InGaN solar cells ', Appl. Phys. Lett., 2007, 91, p. 132117-1 0003-6951
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 132117-1
-
-
Jani, O.1
Ferguson, I.2
Honsberg, C.3
Kurtz, S.4
-
9
-
-
58149229131
-
High-quality InGaN/GaN heterojunctions and their photovoltaic effects
-
0003-6951
-
Zheng, X., Horng, R., Wuu, D., Chu, M., Liao, W., Wu, M., Lin, R., and Lu, Y.: ' High-quality InGaN/GaN heterojunctions and their photovoltaic effects ', Appl. Phys. Lett., 2008, 93, p. 261108-1 0003-6951
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 261108-1
-
-
Zheng, X.1
Horng, R.2
Wuu, D.3
Chu, M.4
Liao, W.5
Wu, M.6
Lin, R.7
Lu, Y.8
-
10
-
-
53749099094
-
High quantum efficiency InGaN/GaN solar cells with 2.95eV band gap
-
0003-6951
-
Neufeld, C.J., Toledo, N.G., Cruz, S.C., Iza, M., DenBaars, S.P., and Mishra, U.K.: ' High quantum efficiency InGaN/GaN solar cells with 2.95eV band gap ', Appl. Phys. Lett., 2008, 93, p. 143502-1 0003-6951
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 143502-1
-
-
Neufeld, C.J.1
Toledo, N.G.2
Cruz, S.C.3
Iza, M.4
Denbaars, S.P.5
Mishra, U.K.6
-
11
-
-
38049160893
-
Photovoltaic effects in InGaN structures with p-n junctions
-
10.1002/pssa.200723202 0031-8965
-
Yang, C., Wang, X., Xiao, H., Ran, J., Wang, C., Hu, G., Wang, X., Zhang, X., Li, J., and Li, J.: ' Photovoltaic effects in InGaN structures with p-n junctions ', Phys. Status Solidi A, 2007, 204, p. 4288-4291 10.1002/pssa. 200723202 0031-8965
-
(2007)
Phys. Status Solidi A
, vol.204
, pp. 4288-4291
-
-
Yang, C.1
Wang, X.2
Xiao, H.3
Ran, J.4
Wang, C.5
Hu, G.6
Wang, X.7
Zhang, X.8
Li, J.9
Li, J.10
-
12
-
-
54849411717
-
Growth, fabrication, and characterization of InGaN solar cells
-
10.1002/pssa.200778695 0031-8965
-
Chen, X., Matthews, K.D., Hao, D., Schaff, W.J., and Eastman, L.F.: ' Growth, fabrication, and characterization of InGaN solar cells ', Phys. Status Solidi A, 2008, 205, p. 1103-1105 10.1002/pssa.200778695 0031-8965
-
(2008)
Phys. Status Solidi A
, vol.205
, pp. 1103-1105
-
-
Chen, X.1
Matthews, K.D.2
Hao, D.3
Schaff, W.J.4
Eastman, L.F.5
-
13
-
-
68849118422
-
Substantial photo-response of InGaN p-i-n homojunction solar cells
-
10.1088/0268-1242/24/5/055009 0268-1242
-
Zeng, S.W., Zhang, B.P., Sun, W.J., Cai, J.F., Chen, C., and Yu, J.Z.: ' Substantial photo-response of InGaN p-i-n homojunction solar cells ', Semicond. Sci. Technol., 2009, 24, p. 055009 10.1088/0268-1242/24/5/055009 0268-1242
-
(2009)
Semicond. Sci. Technol.
, vol.24
, pp. 055009
-
-
Zeng, S.W.1
Zhang, B.P.2
Sun, W.J.3
Cai, J.F.4
Chen, C.5
Yu, J.Z.6
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