Design and realization of wide-band-Gap (∼ 2.67 eV) InGaN p-n junction solar cell

IEEE Electron Device Letters

Volumn 31, Issue 1, 2010, Pages 32-34

  Jampana, Balakrishnam R ^a   Melton, Andrew G ^b   Jamil, Muhammad ^b   Faleev, Nikolai N ^a   Opila, Robert L ^a   Ferguson, Ian T ^c   Honsberg, Christiana B ^d  

^a UNIVERSITY OF DELAWARE   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c University of North Carolina at Charlotte   (United States)

^d Arizona State University   (United States)

Author keywords

Fabrication; InGaN solar cell; Solar cell

Indexed keywords

CRYSTALLINE DEFECTS; DEVICE STRUCTURES; EPITAXIALLY GROWN; INGAN EPILAYERS; INGAN SOLAR CELL; P-N JUNCTION; PHOTOLUMINESCENCE PEAK; PHOTOVOLTAIC RESPONSE; SOLAR CELL PERFORMANCE; ULTRAVIOLET FILTERS; WIDE BAND GAP;

CELLS; EPILAYERS; FABRICATION; OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR JUNCTIONS; SWITCHING CIRCUITS;

SOLAR CELLS;

EID: 72949122558     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2034280     Document Type: Article

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