High-quality InGaN/GaN heterojunctions and their photovoltaic effects

Applied Physics Letters

Volumn 93, Issue 26, 2008, Pages

  Zheng, Xinhe ^a   Horng, Ray Hua ^a   Wuu, Dong Sing ^a   Chu, Mu Tao ^a   Liao, Wen Yih ^b   Wu, Ming Hsien ^b   Lin, Ray Ming ^c   Lu, Yuan Chieh ^c  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMMUNICATION CHANNELS (INFORMATION THEORY); CORUNDUM; GALLIUM NITRIDE; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; PHASE INTERFACES; PHASE SEPARATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

CIRCUIT VOLTAGES; CRYSTAL QUALITIES; FILL FACTORS; GAN FILMS; HIGH FILLS; HIGH RESOLUTIONS; INGAN/GAN; METAL ORGANIC; PHOTOLUMINESCENCE MEASUREMENTS; SAPPHIRE SUBSTRATES; SHARP INTERFACES; SHUNT RESISTANCES; X-RAY DIFFRACTIONS;

GALLIUM ALLOYS;

EID: 58149229131     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3056628     Document Type: Article

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