"Step-graded interlayers" for the improvement of MOVPE In xGa1-xN (x ∼ 0.4) epi-layer quality

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 2097-2100

  Islam, Md Rafiqul ^a   Ohmura, Y ^a   Hashimoto, A ^a   Yamamoto, A ^a   Kinoshita, K ^b   Koji, Y ^b  

^a UNIVERSITY OF FUKUI   (Japan)

^b KANSAI ELECTRIC POWER CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITIES; EDGE DISLOCATION; EDGE DISLOCATION DENSITY; EPITAXIAL STRUCTURE; GAN LAYERS; GRADED INTERLAYER; HRXRD; MOVPE;

GALLIUM NITRIDE; INDIUM; STRESS INTENSITY FACTORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

EDGE DISLOCATIONS;

EID: 77955839344     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983586     Document Type: Conference Paper

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