MOVPE of GaInN heterostructures and quantum wells

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 8-12

  Scholz, Ferdinand ^a   Off, Jürgen ^a   Sohmer, Alexander ^a   Syganow, Viktor ^a   Dörnen, Achim ^a   Ambacher, Oliver ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

Composition; GaInN; Interfaces; MOVPE; Photoluminescence; Quantum wells

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

OPTICAL SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032090914     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00146-8     Document Type: Article

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