Composition dependence of the band gap energy of InxGa1-xN layers on GaN (x≤0.15) grown by metal-organic chemical vapor deposition

Materials Research Society Symposium - Proceedings

Volumn 537, Issue , 1999, Pages

  Wagner, J ^a   Ramakrishnan, A ^a   Behr, D ^a   Maier, M ^a   Herres, N ^a   Kunzer, M ^a   Obloh, H ^a   Bachem, K H ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELLIPSOMETRY; ENERGY GAP; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOELECTRON SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN RATE; X RAY DIFFRACTION ANALYSIS;

BAND GAP ENERGY; INDIUM GALLIUM NITRIDE; STRAIN INDUCED SHIFT;

COMPOSITION EFFECTS;

EID: 17044460597     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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