Electronic structure of two interacting phosphorus δ-doped layers in silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 87, Issue 4, 2013, Pages

  Carter, D J ^a,b   Warschkow, O ^c   Marks, N A ^a   McKenzie, D R ^c  

^a CURTIN UNIVERSITY   (Australia)

^b Western Australian Interactive Virtual Environments Centre   (Australia)

^c UNIVERSITY OF SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84872909249     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.87.045204     Document Type: Article

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