Erratum: Electronic structure models of phosphorus δ -doped silicon ([Physical Review B (2009) 79 (033204))

Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 4, 2009, Pages

  Carter, Damien J ^a   Warschkow, Oliver ^a   Marks, Nigel A ^a   McKenzie, David R ^a  

^a NONE

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EID: 68949083795     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.049901     Document Type: Erratum

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