A study of temperature-dependent properties of N-type δ-doped Si band-structures in equilibrium

Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Volumn , Issue , 2009, Pages

  Ryu, Hoon ^a   Lee, Sunhee ^a   Klimeck, Gerhard ^a  

^a Purdue University   (United States)

Author keywords

doped Si; Schr dinger Poisson; Self consistent simulation; Tight binding

Indexed keywords

ATOMISTIC REPRESENTATION; BAND MODEL; DOPING DENSITIES; IMPURITY IONS; MANY ELECTRON; PERIODIC BOUNDARY CONDITIONS; POISSON SOLVERS; POTENTIAL PROFILES; QUANTUM WELL; ROOM TEMPERATURE; SELF-CONSISTENT SIMULATION; SEMI-EMPIRICAL; SI DEVICES; TEMPERATURE DEPENDENT; TEMPERATURE-DEPENDENT PROPERTIES; TIGHT-BINDING;

ELECTRONIC PROPERTIES; ELECTRONICS ENGINEERING; IONIC CONDUCTION; PHOSPHORUS; POISSON DISTRIBUTION; POISSON EQUATION; SILICON; THREE DIMENSIONAL;

DOPING (ADDITIVES);

EID: 70350234825     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.2009.5091082     Document Type: Conference Paper

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