Influence of doping density on electronic transport in degenerate Si:P δ -doped layers

Physical Review B - Condensed Matter and Materials Physics

Volumn 73, Issue 3, 2006, Pages

  Goh, K E J ^a   Oberbeck, L ^a,b   Simmons, M Y ^a   Hamilton, A R ^a   Butcher, M J ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33144458986     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.73.035401     Document Type: Article

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