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Volumn 75, Issue 25, 1999, Pages 3947-3949

Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire

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EID: 0000900190     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125503     Document Type: Article
Times cited : (348)

References (13)
  • 11
    • 0003548707 scopus 로고
    • edited by B. Grzybowska-Swierkosz and B. R. Pamplin Pergamon, Oxford, Chap. 13
    • Z. M. Jarzebski, in Oxide Semiconductors, edited by B. Grzybowska-Swierkosz and B. R. Pamplin (Pergamon, Oxford, 1973), Chap. 13, p. 228.
    • (1973) Oxide Semiconductors , pp. 228
    • Jarzebski, Z.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.