Comparative studies on structural and optical properties of ZnO films grown on c-plane sapphire and GaAs (001) by MOCVD

Solid State Communications

Volumn 126, Issue 11, 2003, Pages 623-627

  Bang, Kyu Hyun ^c   Hwang, Deuk Kyu ^a   Jeong, Min Chang ^a   Sohn, Kee Sun ^b   Myoung, Jae Min ^a  

^a Yonsei University   (South Korea)

^b Sunchon National University   (South Korea)

^c NONE

Author keywords

A. GaAs; A. Sapphire; A. ZnO; D. AFM; D. MOCVD; D. TRPL

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL FILMS; OPTICAL PROPERTIES; SAPPHIRE; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

STRUCTURAL PROPERTIES;

ZINC OXIDE;

EID: 0038516899     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(03)00297-7     Document Type: Article

References (23)

1. Srikant V., Clarke D.R. J. Appl. Phys. 83:1998;5447.
2. Hümmer K. Phys. Status Solidi. 56:1973;249.
3. Ryu Y.R., Kim W.J., White H.W. J. Cryst. Growth. 219:2000;419.
4. Yang T.L., Zhang D.H., Ma J., Ma H.L., Chen Y. Thin Solid Films. 326:1998;60.
5. Francombe M.H., Krishnaswamy S.V. J. Vac. Sci. Technol. A. 8:1990;1382.
6. Bagnall D.M., Chen Y.F., Zhu Z., Yao T., Koyama S., Shen M.Y., Goto T. Appl. Phys. Lett. 70:1997;2230.
7. Segawa Y., Ohtomo A., Kawasaki M., Koinuma H., Tang Z.K., Yu P., Wong G.K.L. Phys. Status Solidi B. 202:1997;669.
8. Chen Y., Bagnall D.M., Koh H.J., Park K.T., Hiraga K., Zhu Z., Yao T. J. Appl. Phys. 84:1998;3912.
9. Kumano H., Ashrafi A.A., Ueta A., Avramescu A., Suemune I. J. Cryst. Growth. 214-215:2000;280.
10. Ryu Y.R., Zhu S., Budai J.D., Chandrasekhar H.R., Miceli P.F., White H.W. J. Appl. Phys. 88:2000;201.
11. Bang K.H., Hwang D.K., Lim S.W., Myoung J.M. J. Cryst. Growth. 250:2003;437.
12. Fujimura N., Kishihara T., Goto S., Xua J., Ito T. J. Cryst. Growth. 130:1993;269.
13. Lim W.T., Lee C.H. Thin Solid Films. 353:1999;12.
14. Madelung O. Data in Science and Technology, Semiconductors other than Group IV elements and III-V Compounds. 1992;Springer, Berlin.
15. Zu P., Tang Z.K., Wong G.K.L., Kawasaki M., Ohtomo A., Koinuma H., Segawa Y. Solid State Commun. 103:1997;459.
16. Tang Z.K., Wong G.K.L., Zu P., Kawasaki M., Ohtomo A., Koinuma H., Segawa Y. Appl. Phys. Lett. 72:1998;3270.
17. Sherriff R.E., Reynolds D.C., Look D.C., Jogai B., Hoelscher J.E., Collins T.C., Cantwell G., Harsch W.C. J. Appl. Phys. 88:2000;3454.
18. Jung S.W., Park W.I., Cheong H.D., Yi G.C., Jang H.M., Hong S., Joo T. Appl. Phys. Lett. 80:2002;1924.
19. Glaser E.R., Kennedy T.A., Doverspike K., Rowland L.B., Gaskill D.K., Freitas J.A. Jr., Khan M.A., Olson D.T., Kuznia J.N., Wickenden D.K. Phys. Rev. B. 51:1995;13326.
20. Ogino T., Aoki M. Jpn. J. Appl. Phys. 19:1980;2395.
21. Reynolds D.C., Look D.C., Jogai B. J. Appl. Phys. 89:2001;6189.
22. Dingle R. Phys. Rev. Lett. 23:1969;579.
23. Kuhnert R., Helbig R. J. Lumin. 26:1981;203.