Role of low O2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates

Solid-State Electronics

Volumn 50, Issue 6, 2006, Pages 1119-1123

  Pandis, Ch ^a   Brilis, N ^a   Tsamakis, D ^a   Ali, H A ^b   Krishnamoorthy, S ^b   Iliadis, A A ^b,c  

^a NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^b UNIVERSITY OF MARYLAND   (United States)

^c UNIVERSITY OF THE AEGEAN   (Greece)

Author keywords

Hydrogen effect; Native defects; P type ZnO; PLD; Undoped

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; OXIDES; PRESSURE EFFECTS; SILICON; SUBSTRATES; THERMAL CONDUCTIVITY; THIN FILMS;

HYDROGEN EFFECTS; NATIVE DEFECTS; P-TYPE ZNO; UNDOPED;

PULSED LASER DEPOSITION;

EID: 33745746038     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.04.025     Document Type: Article

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