Annealing effects on electrical and optical properties of ZnO films deposited on GaAs by metal organic chemical vapor deposition

Applied Surface Science

Volumn 254, Issue 22, 2008, Pages 7482-7485

  Sun, Jingchang ^a   Liang, Hongwei ^a   Zhao, Jianze ^a   Feng, Qiuju ^a   Bian, Jiming ^a   Zhao, Ziwen ^a   Zhang, Heqiu ^a   Luo, Yingmin ^a   Hu, Lizhong ^a   Du, Guotong ^a,b  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b JILIN UNIVERSITY   (China)

Author keywords

Annealing; Electrical and optical properties; ZnO GaAs

Indexed keywords

ANNEALING; ARSENIC; BINDING ENERGY; GALLIUM ARSENIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; INDUSTRIAL CHEMICALS; IONS; METAL ANALYSIS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANOMETALLICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; THIN FILMS; ZINC OXIDE;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); ANNEALING TEMPERATURES; DONOR-ACCEPTOR PAIRS; ELECTRICAL AND OPTICAL PROPERTIES; NEAR BAND EDGE EMISSIONS; PHOTOLUMINESCENCE MEASUREMENTS; SECONDARY ION MASS SPECTROSCOPY; ZNO/GAAS;

OPTICAL FILMS;

EID: 50549102654     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.06.005     Document Type: Article

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