ZnO Schottky diodes with iridium contact electrodes

Semiconductor Science and Technology

Volumn 23, Issue 8, 2008, Pages 085016-

  Young, S J ^a   Ji, L W ^b   Chang, S J ^a   Chen, Y P ^a   Peng, S M ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; DIRECT ENERGY CONVERSION; ELECTRODES; IRIDIUM; METALLIZING; OPTICAL DESIGN; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION; ZINC ALLOYS; ZINC OXIDE;

CAPACITANCE-VOLTAGE MEASUREMENTS; CONTACT ELECTRODES; EMISSION MODELLING; IDEALITY FACTORS; SCHOTTKY DIODES; SCHOTTKY-BARRIER HEIGHT; ZNO FILMS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 51849120603     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/8/085016     Document Type: Article

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