Annealing effects on the microstructure and photoluminescence properties of Ni-doped ZnO films

Applied Surface Science

Volumn 222, Issue 1-4, 2004, Pages 263-268

  Qiu, D J ^a   Wu, H Z ^a,b   Feng, A M ^c   Lao, Y F ^b   Chen, N B ^a   Xu, T N ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^c CHINA JILIANG UNIVERSITY   (China)

Author keywords

Electron beam reactive deposition; Microstructure; Ni doped ZnO films; Photoluminescence

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; DOPING (ADDITIVES); ELECTRON BEAMS; EVAPORATION; FILM GROWTH; HIGH TEMPERATURE EFFECTS; MICROSTRUCTURE; NICKEL; PHOTOLUMINESCENCE; STRUCTURE (COMPOSITION); SUBSTRATES; SYNTHESIS (CHEMICAL); ULTRAVIOLET RADIATION; ZINC OXIDE;

ANNEALING TEMPERATURES; CORROSIVE ENVIRONMENTS; ELECTRON BEAM REACTIVE DEPOSITION; NEAR-BAND-EDGE (NBE) EMISSIONS;

THIN FILMS;

EID: 0346753483     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.015     Document Type: Article

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