-
1
-
-
12744253475
-
An all-silicon Raman laser
-
10.1038/nature03273 0028-0836
-
Rong H, Liu A, Jones R, Cohen O, Hak D, Nicolaescu R, Fang A and Paniccia M 2005 An all-silicon Raman laser Nature 433 292-4
-
(2005)
Nature
, vol.433
, Issue.7023
, pp. 292-294
-
-
Rong, H.1
Liu, A.2
Jones, R.3
Cohen, O.4
Hak, D.5
Nicolaescu, R.6
Fang, A.7
Paniccia, M.8
-
2
-
-
0000816654
-
Suppression of three-dimensional island nucleation during GaAs growth on Si (100)
-
10.1103/PhysRevLett.67.2826 0031-9007
-
Choi C, Ai R and Barnett S 1991 Suppression of three-dimensional island nucleation during GaAs growth on Si (100) Phys. Rev. Lett. 67 2826-9
-
(1991)
Phys. Rev. Lett.
, vol.67
, Issue.20
, pp. 2826-2829
-
-
Choi, C.1
Ai, R.2
Barnett, S.3
-
3
-
-
3242724137
-
Low threshold laser operation at room temperature in GaAs/(Al, Ga) As structures grown directly on (1 0 0) Si
-
10.1063/1.96909 0003-6951
-
Fischer R, Kopp W, Morkoc H, Pion M and Specht A 1986 Low threshold laser operation at room temperature in GaAs/(Al, Ga) As structures grown directly on (1 0 0) Si Appl. Phys. Lett. 48 1360-1
-
(1986)
Appl. Phys. Lett.
, vol.48
, Issue.20
, pp. 1360-1361
-
-
Fischer, R.1
Kopp, W.2
Morkoc, H.3
Pion, M.4
Specht, A.5
-
4
-
-
20844456603
-
Over 1.3 μm continuous-wave laser emission from InGaSb quantum-dot laser diode fabricated on GaAs substrates
-
DOI 10.1063/1.1931046, 203118
-
Yamamoto N, Akahane K, Gozu S and Ohtani N 2005 Over 1.3 m continuous-wave laser emission from InGaSb quantum-dot laser diode fabricated on GaAs substrates Appl. Phys. Lett. 86 203118 (Pubitemid 40861053)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.20
, pp. 1-3
-
-
Yamamoto, N.1
Akahane, K.2
Gozu, S.3
Ohtani, N.4
-
5
-
-
84859765670
-
III-V/Si hybrid photonic devices by direct fusion bonding
-
10.1038/srep00349 2045-2322
-
Tanabe K, Watanabe K and Arakawa Y 2012 III-V/Si hybrid photonic devices by direct fusion bonding Sci. Rep. 2 349
-
(2012)
Sci. Rep.
, vol.2
, pp. 349
-
-
Tanabe, K.1
Watanabe, K.2
Arakawa, Y.3
-
6
-
-
0026883374
-
Monolithic integration of AlGaAs/GaAs MQW laser diode and GaAs MESFET grown on Si using selective regrowth
-
10.1109/68.141985 1041-1135
-
Egawa T and Jimbo T 1992 Monolithic integration of AlGaAs/GaAs MQW laser diode and GaAs MESFET grown on Si using selective regrowth IEEE Photon. Technol. Lett. 4 612-4
-
(1992)
IEEE Photon. Technol. Lett.
, vol.4
, Issue.6
, pp. 612-614
-
-
Egawa, T.1
Jimbo, T.2
-
7
-
-
0344118208
-
Room temperature laser operation of strained InGaAs/GaAs QW structure monolithically grown by MOVCD on LE-PECVD Ge/Si virtual substrate
-
10.1049/el:20030926 0013-5194
-
Chriqui Y, Saint-Girons G, Bouchoule S, Moison J-M, Isella G, von Kaenel H and Sagnes I 2003 Room temperature laser operation of strained InGaAs/GaAs QW structure monolithically grown by MOVCD on LE-PECVD Ge/Si virtual substrate Electron. Lett. 39 1658-60
-
(2003)
Electron. Lett.
, vol.39
, Issue.23
, pp. 1658-1660
-
-
Chriqui, Y.1
Saint-Girons, G.2
Bouchoule, S.3
Moison, J.-M.4
Isella, G.5
Von Kaenel, H.6
Sagnes, I.7
-
8
-
-
84861108534
-
An electrically pumped germanium laser
-
10.1364/OE.20.011316 1094-4087
-
Camacho-Aguilera R E, Cai Y, Patel N, Bessette J T, Romagnoli M, Kimerling L C and Michel J 2012 An electrically pumped germanium laser Opt. Express 20 11316-20
-
(2012)
Opt. Express
, vol.20
, Issue.10
, pp. 11316-11320
-
-
Camacho-Aguilera, R.E.1
Cai, Y.2
Patel, N.3
Bessette, J.T.4
Romagnoli, M.5
Kimerling, L.C.6
Michel, J.7
-
9
-
-
79959861999
-
Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate
-
10.1038/nphoton.2011.120 1749-4885
-
Liu H, Wang T, Jiang Q, Hogg R, Tutu F, Pozzi F and Seeds A 2011 Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate Nature Photon. 5 416-9
-
(2011)
Nature Photon.
, vol.5
, Issue.7
, pp. 416-419
-
-
Liu, H.1
Wang, T.2
Jiang, Q.3
Hogg, R.4
Tutu, F.5
Pozzi, F.6
Seeds, A.7
-
10
-
-
84866645356
-
Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities
-
10.1364/OE.20.022181 1094-4087
-
Lee A, Jiang Q, Tang M, Seeds A and Liu H 2012 Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities Opt. Express 20 22181
-
(2012)
Opt. Express
, vol.20
, Issue.20
, pp. 22181
-
-
Lee, A.1
Jiang, Q.2
Tang, M.3
Seeds, A.4
Liu, H.5
-
11
-
-
3242723220
-
Low-threshold high-efficiency AlGaAs-GaAs double-heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition
-
10.1063/1.98185 0003-6951
-
Dupuis R D, van der Ziel J P, Logan R A, Brown J M and Pinzone C J 1987 Low-threshold high-efficiency AlGaAs-GaAs double-heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition Appl. Phys. Lett. 50 407
-
(1987)
Appl. Phys. Lett.
, vol.50
, Issue.7
, pp. 407
-
-
Dupuis, R.D.1
Van Der Ziel, J.P.2
Logan, R.A.3
Brown, J.M.4
Pinzone, C.J.5
-
12
-
-
31144439652
-
High quality AlSb bulk material on Si substrates using a monolithic self-assembled quantum dot nucleation layer
-
DOI 10.1116/1.1924424
-
Balakrishnan G, Huang S, Khoshakhlagh A, Dawson L R, Xin Y-C, Conlin P and Huffaker D L 2005 High quality AlSb bulk material on Si substrates using a monolithic self-assembled quantum dot nucleation layer J. Vac. Sci. Technol. B 23 1010 (Pubitemid 43127307)
-
(2005)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.23
, Issue.3
, pp. 1010-1012
-
-
Balakrishnan, G.1
Huang, S.2
Khoshakhlagh, A.3
Dawson, L.R.4
Xin, Y.-C.5
Conlin, P.6
Huffaker, D.L.7
-
13
-
-
22944438437
-
0.5As quantum dot laser on silicon
-
DOI 10.1049/el:20051558
-
Mi Z, Bhattacharya P and Yang J 2005 Room-temperature self-organised In0. 5Ga0. 5As quantum dot laser on silicon Electron. Lett. 41 742-4 (Pubitemid 41047970)
-
(2005)
Electronics Letters
, vol.41
, Issue.13
, pp. 742-744
-
-
Mi, Z.1
Bhattacharya, P.2
Yang, J.3
Pipe, K.P.4
-
14
-
-
0000156435
-
Antiphasedomain structures in GaP and GaAs epitaxial layers grown on Si and Ge
-
10.1016/0022-0248(77)90305-0 0022-0248
-
Morizane K 1977 Antiphasedomain structures in GaP and GaAs epitaxial layers grown on Si and Ge J. Cryst. Growth 38 249-54
-
(1977)
J. Cryst. Growth
, vol.38
, Issue.2
, pp. 249-254
-
-
Morizane, K.1
-
15
-
-
0000575813
-
Dislocation reduction in epitaxial GaAs on Si(1 0 0)
-
10.1063/1.96988 0003-6951
-
Fischer R, Neuman D, Zabel H, Morkoc H, Choi C and Otsuka N 1986 Dislocation reduction in epitaxial GaAs on Si(1 0 0) Appl. Phys. Lett. 48 1223
-
(1986)
Appl. Phys. Lett.
, vol.48
, Issue.18
, pp. 1223
-
-
Fischer, R.1
Neuman, D.2
Zabel, H.3
Morkoc, H.4
Choi, C.5
Otsuka, N.6
-
16
-
-
33847103576
-
Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates
-
DOI 10.1049/el:20073333
-
Balakrishnan G, Mehta M, Kutty M N, Patel P, Albrecht A R, Rotella P, Krishna S, Dawson L R and Huffaker D L 2007 Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (1 0 0) substrates Electron. Lett. 43 244-5 (Pubitemid 46280783)
-
(2007)
Electronics Letters
, vol.43
, Issue.4
, pp. 244-245
-
-
Balakrishnan, G.1
Mehta, M.2
Kutty, M.N.3
Patel, P.4
Albrecht, A.R.5
Rotella, P.6
Krishna, S.7
Dawson, L.R.8
Huffaker, D.L.9
-
17
-
-
80053425483
-
Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si
-
Reboul J, Cerutti L and Rodriguez J 2011 Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si Appl. Phys. Lett. 121113 38-41
-
(2011)
Appl. Phys. Lett. 121113
, pp. 38-41
-
-
Reboul, J.1
Cerutti, L.2
Rodriguez, J.3
-
18
-
-
67651003284
-
Monolithically integrated III-Sb-based laser diodes grown on miscut Si substrates
-
10.1109/JSTQE.2009.2015678 1077-260X
-
Tatebayashi J, Jallipalli A, Kutty M N, Huang S, Nunna K, Balakrishnan G, Dawson L R and Huffaker D L 2009 Monolithically integrated III-Sb-based laser diodes grown on miscut Si substrates IEEE J. Sel. Top. Quantum Electron. 15 716-23
-
(2009)
IEEE J. Sel. Top. Quantum Electron.
, vol.15
, Issue.3
, pp. 716-723
-
-
Tatebayashi, J.1
Jallipalli, A.2
Kutty, M.N.3
Huang, S.4
Nunna, K.5
Balakrishnan, G.6
Dawson, L.R.7
Huffaker, D.L.8
-
19
-
-
63349086692
-
Quantum dot lasers: From promise to high-performance devices
-
10.1016/j.jcrysgro.2008.09.035 0022-0248
-
Bhattacharya P, Mi Z, Yang J, Basu D and Saha D 2009 Quantum dot lasers: from promise to high-performance devices J. Cryst. Growth 311 1625-31
-
(2009)
J. Cryst. Growth
, vol.311
, Issue.7
, pp. 1625-1631
-
-
Bhattacharya, P.1
Mi, Z.2
Yang, J.3
Basu, D.4
Saha, D.5
-
20
-
-
79958188548
-
1.3-m InAs/GaAs quantum-dot lasers monolithically grown on Si substrates
-
10.1364/OE.19.011381 1094-4087
-
Wang T, Liu H, Lee A, Pozzi F and Seeds A 2011 1.3-m InAs/GaAs quantum-dot lasers monolithically grown on Si substrates Opt. Express 19 11381-6
-
(2011)
Opt. Express
, vol.19
, Issue.12
, pp. 11381-11386
-
-
Wang, T.1
Liu, H.2
Lee, A.3
Pozzi, F.4
Seeds, A.5
-
21
-
-
84861490504
-
Nanolasers grown on silicon-based MOSFETs
-
10.1364/OE.20.012171 1094-4087
-
Lu F, Tran T, Ko W, Ng K and Chen R 2012 Nanolasers grown on silicon-based MOSFETs Opt. Express 20 12171
-
(2012)
Opt. Express
, vol.20
, Issue.11
, pp. 12171
-
-
Lu, F.1
Tran, T.2
Ko, W.3
Ng, K.4
Chen, R.5
-
22
-
-
0021444928
-
MOLECULAR BEAM EPITAXIAL GROWTH AND MATERIAL PROPERTIES OF GaAs AND AlGaAs ON Si (100).
-
DOI 10.1063/1.94673
-
Wang W I 1984 Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (1 0 0) Appl. Phys. Lett. 44 1149 (Pubitemid 14581881)
-
(1984)
Applied Physics Letters
, vol.44
, Issue.12
, pp. 1149-1151
-
-
Wang, W.I.1
-
23
-
-
0022667504
-
6SB double heterostructures grown by molecular beam heteroepitaxy on SI
-
DOI 10.1063/1.96528
-
van der Ziel J P, Malik R J, Walker J F and Mikulyak R M 1986 Optically pumped laser oscillation in the 1.6-1.8 m region from Al0.4Ga0.6Sb/GaSb/Al0. 4Ga0.6Sb double heterostructures grown by molecular beam heteroepitaxy on Si Appl. Phys. Lett. 48 454 (Pubitemid 17615495)
-
(1986)
Applied Physics Letters
, vol.48
, Issue.7
, pp. 454-456
-
-
Van Der Ziel, J.P.1
Malik, R.J.2
Walker, J.F.3
Mikulyak, R.M.4
-
24
-
-
0032691632
-
Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates
-
10.1007/s11664-999-0213-9 0361-5235
-
Seaford M L, Hesse P J, Tomich D H and Eyink K G 1999 Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates J. Electron. Mater. 28 878-80
-
(1999)
J. Electron. Mater.
, vol.28
, Issue.7
, pp. 878-880
-
-
Seaford, M.L.1
Hesse, P.J.2
Tomich, D.H.3
Eyink, K.G.4
-
25
-
-
0029511778
-
High-performance InGaAs photodetectors on Si and GaAs substrates
-
10.1063/1.114410 0003-6951
-
Ejeckam F E, Chua C L, Zhu Z H, Lo Y H, Hong M and Bhat R 1995 High-performance InGaAs photodetectors on Si and GaAs substrates Appl. Phys. Lett. 67 3936
-
(1995)
Appl. Phys. Lett.
, vol.67
, Issue.26
, pp. 3936
-
-
Ejeckam, F.E.1
Chua, C.L.2
Zhu, Z.H.3
Lo, Y.H.4
Hong, M.5
Bhat, R.6
-
26
-
-
0000913099
-
Dislocation-free InSb grown on GaAs compliant universal substrates
-
10.1063/1.119642 0003-6951
-
Ejeckam F E, Seaford M L, Lo Y-H, Hou H Q and Hammons B E 1997 Dislocation-free InSb grown on GaAs compliant universal substrates Appl. Phys. Lett. 71 776
-
(1997)
Appl. Phys. Lett.
, vol.71
, Issue.6
, pp. 776
-
-
Ejeckam, F.E.1
Seaford, M.L.2
Lo, Y.-H.3
Hou, H.Q.4
Hammons, B.E.5
-
27
-
-
85008054200
-
GaSb-based laser, monolithically grown on silicon substrate, emitting at 1. 55 m at room temperature
-
10.1109/LPT.2010.2042591 1041-1135
-
Cerutti L, Rodriguez J B and Tournie E 2010 GaSb-based laser, monolithically grown on silicon substrate, emitting at 1. 55 m at room temperature IEEE Photon. Technol. Lett. 22 553-5
-
(2010)
IEEE Photon. Technol. Lett.
, vol.22
, Issue.8
, pp. 553-555
-
-
Cerutti, L.1
Rodriguez, J.B.2
Tournie, E.3
-
28
-
-
60349102926
-
Room-temperature operation of a 2.25 m electrically pumped laser fabricated on a silicon substrate
-
10.1063/1.3082098 0003-6951 061124
-
Rodriguez J B, Cerutti L, Grech P and Tournié E 2009 Room-temperature operation of a 2.25 m electrically pumped laser fabricated on a silicon substrate Appl. Phys. Lett. 94 061124
-
(2009)
Appl. Phys. Lett.
, vol.94
, Issue.6
-
-
Rodriguez, J.B.1
Cerutti, L.2
Grech, P.3
Tournié, E.4
-
29
-
-
0016484178
-
Gain spectra in GaAs double-heterostructure injection lasers
-
10.1063/1.321696 0021-8979
-
Hakki B W and Paoli T L 1975 Gain spectra in GaAs double-heterostructure injection lasers J. Appl. Phys. 46 1299
-
(1975)
J. Appl. Phys.
, vol.46
, Issue.3
, pp. 1299
-
-
Hakki, B.W.1
Paoli, T.L.2
-
31
-
-
0037049562
-
Measurements of α-factor in 2-2.5 m type-I In(Al)GaAsSb/GaSb high power diode lasers
-
10.1063/1.1528291 0003-6951
-
Shterengas L, Belenky G L, Gourevitch a, Kim J G and Martinelli R U 2002 Measurements of α-factor in 2-2.5 m type-I In(Al)GaAsSb/GaSb high power diode lasers Appl. Phys. Lett. 81 4517
-
(2002)
Appl. Phys. Lett.
, vol.81
, Issue.24
, pp. 4517
-
-
Shterengas, L.1
Belenky, G.L.2
Gourevitch, A.3
Kim, J.G.4
Martinelli, R.U.5
-
32
-
-
7744234987
-
Very-low-threshold 2.4-m GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime
-
10.1109/LPT.2004.835623 1041-1135
-
Salhi A, Rouillard Y, Angellier J and Garcia M 2004 Very-low-threshold 2.4-m GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime IEEE Photon. Technol. Lett. 16 2424-6
-
(2004)
IEEE Photon. Technol. Lett.
, vol.16
, Issue.11
, pp. 2424-2426
-
-
Salhi, A.1
Rouillard, Y.2
Angellier, J.3
Garcia, M.4
-
33
-
-
0032677534
-
2.3-2.7-m room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers
-
10.1109/68.769710 1041-1135
-
Garbuzov D Z, Lee H, Khalfin V, Martinelli R, Connolly J C and Belenky G L 1999 2.3-2.7-m room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers IEEE Photon. Technol. Lett. 11 794-6
-
(1999)
IEEE Photon. Technol. Lett.
, vol.11
, Issue.7
, pp. 794-796
-
-
Garbuzov, D.Z.1
Lee, H.2
Khalfin, V.3
Martinelli, R.4
Connolly, J.C.5
Belenky, G.L.6
-
34
-
-
31344458954
-
Self-organised quantum dots as dislocation filters: The case of GaAs-based lasers on silicon
-
DOI 10.1049/el:20063582
-
Mi Z, Yang J, Bhattacharya P and Huffaker D L 2006 Self-organised quantum dots as dislocation filters: the case of GaAs-based lasers on silicon Electron. Lett. 42 1-2 (Pubitemid 43145795)
-
(2006)
Electronics Letters
, vol.42
, Issue.2
, pp. 121-123
-
-
Mi, Z.1
Yang, J.2
Bhattacharya, P.3
Huffaker, D.L.4
-
35
-
-
40849132043
-
Monolithic integration of InGaAs-GaAs quantum-dot laser and quantum-well electroabsorption modulator on silicon
-
10.1109/LPT.2007.895429 1041-1135
-
Yang J and Bhattacharya P 2007 Monolithic integration of InGaAs-GaAs quantum-dot laser and quantum-well electroabsorption modulator on silicon IEEE Photon. Technol. Lett. 19 747-9
-
(2007)
IEEE Photon. Technol. Lett.
, vol.19
, Issue.10
, pp. 747-749
-
-
Yang, J.1
Bhattacharya, P.2
-
36
-
-
34547109861
-
Groove-coupled InGaAs/GaAs quantum dot laser/waveguide on silicon
-
DOI 10.1109/JLT.2007.899165
-
Bhattacharya P and Yang J 2007 Groove-coupled InGaAs/GaAs quantum dot laser/waveguide on silicon J. Lightwave Technol. 25 1826-31 (Pubitemid 47103974)
-
(2007)
Journal of Lightwave Technology
, vol.25
, Issue.7
, pp. 1826-1831
-
-
Yang, J.1
Mi, Z.2
Bhattacharya, P.3
-
37
-
-
9144220371
-
1.3m InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density
-
10.1049/el:20046692 0013-5194
-
Sellers I R, Liu H Y, Groom K M, Childs D T, Robbins D, Badcock T J, Hopkinson M, Mowbray D J and Skolnick M S 2004 1.3m InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density Electron. Lett. 40 1412-3
-
(2004)
Electron. Lett.
, vol.40
, Issue.22
, pp. 1412-1413
-
-
Sellers, I.R.1
Liu, H.Y.2
Groom, K.M.3
Childs, D.T.4
Robbins, D.5
Badcock, T.J.6
Hopkinson, M.7
Mowbray, D.J.8
Skolnick, M.S.9
-
38
-
-
84863066904
-
The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates
-
10.1063/1.3682314 0003-6951 052113
-
Wang T, Lee A, Tutu F, Seeds A, Liu H, Jiang Q, Groom K and Hogg R 2012 The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates Appl. Phys. Lett. 100 052113
-
(2012)
Appl. Phys. Lett.
, vol.100
, Issue.5
-
-
Wang, T.1
Lee, A.2
Tutu, F.3
Seeds, A.4
Liu, H.5
Jiang, Q.6
Groom, K.7
Hogg, R.8
-
39
-
-
20544446361
-
High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents
-
DOI 10.1109/LPT.2005.846948
-
Liu H Y, Childs D T, Badcock T J, Groom K M, Sellers I R, Hopkinson M, Hogg R A, Robbins D J, Mowbray D J and Skolnick M S 2005 High-performance three-layer 1.3-m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents IEEE Photon. Technol. Lett. 17 1139-41 (Pubitemid 40843443)
-
(2005)
IEEE Photonics Technology Letters
, vol.17
, Issue.6
, pp. 1139-1141
-
-
Liu, H.Y.1
Childs, D.T.2
Badcock, T.J.3
Groom, K.M.4
Sellers, I.R.5
Hopkinson, M.6
Hogg, R.A.7
Robbins, D.J.8
Mowbray, D.J.9
Skolnick, M.S.10
-
40
-
-
79952137652
-
Nanolasers grown on silicon
-
10.1038/nphoton.2010.315 1749-4885
-
Chen R, Tran T, Ng K and Ko W 2011 Nanolasers grown on silicon Nature Photon. 5 170-5
-
(2011)
Nature Photon.
, vol.5
, Issue.3
, pp. 170-175
-
-
Chen, R.1
Tran, T.2
Ng, K.3
Ko, W.4
-
41
-
-
78751485124
-
Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy
-
10.1063/1.3525610 0021-8979 114316
-
Hertenberger S, Rudolph D, Bichler M, Finley J J, Abstreiter G and Koblmuller G 2010 Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy J. Appl. Phys. 108 114316
-
(2010)
J. Appl. Phys.
, vol.108
, Issue.11
-
-
Hertenberger, S.1
Rudolph, D.2
Bichler, M.3
Finley, J.J.4
Abstreiter, G.5
Koblmuller, G.6
-
42
-
-
80755189413
-
InxGa1-xAs nanowires on silicon: One-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics
-
10.1021/nl202676b 1530-6984
-
Shin J C, Kim K H, Yu K J, Hu H, Yin L, Ning C-Z, Rogers J A, Zuo J-M and Li X 2011 InxGa1-xAs nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics Nano Lett. 11 4831-8
-
(2011)
Nano Lett.
, vol.11
, Issue.11
, pp. 4831-4838
-
-
Shin, J.C.1
Kim, K.H.2
Yu, K.J.3
Hu, H.4
Yin, L.5
Ning, C.-Z.6
Rogers, J.A.7
Zuo, J.-M.8
Li, X.9
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