Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime

IEEE Photonics Technology Letters

Volumn 16, Issue 11, 2004, Pages 2424-2426

  Salhi, Abdelmajid ^a   Rouillard, Yves ^a   Angellier, Julie ^a   Garcia, Michel ^a  

^a UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

RIDGE WAVEGUIDE; THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 7744234987     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.835623     Document Type: Article

References (8)

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5. C. Lin, M. Grau, O. Dier, and M.-C Amann, "Low threshold room-temperature continuous-wave operation of 2.24-3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers," [i Appl. Phys. Lett. i], vol. 84, pp. 5088-5090, 2004.
6. A. Salhi, Y. Rouillard, A. Pérona, P. Grech, M. Garcia, and C. Sirtori, "Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 μm," [i Semicond. Sci. Technol. i], vol. 19, pp. 260-262, 2004.
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