메뉴 건너뛰기




Volumn 43, Issue 4, 2007, Pages 244-245

Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; INTERFACES (MATERIALS); LIGHT EMISSION; QUANTUM WELL LASERS; SILICON; SUBSTRATES;

EID: 33847103576     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20073333     Document Type: Article
Times cited : (9)

References (17)
  • 3
    • 0041900583 scopus 로고
    • Heteroepitaxy on silicon: Fundamentals, structure and devices
    • Choi, H.K., Hull, R., Ishiwara, H., and Nemanich, R.J.: ' Heteroepitaxy on silicon: fundamentals, structure and devices ', Proc. MRS Symp., 1988, 116
    • (1988) Proc. MRS Symp. , vol.116
    • Choi, H.K.1    Hull, R.2    Ishiwara, H.3    Nemanich, R.J.4
  • 4
    • 0000195254 scopus 로고
    • Achievements and limitations in optimized GaAs films grown on Si by molecular-beam epitaxy
    • 10.1063/1.351041 0021-8979
    • Georgakilas, A., Panayotatos, P., Stoemenos, J., Mourrain, J.-L., and Christou, A.: ' Achievements and limitations in optimized GaAs films grown on Si by molecular-beam epitaxy ', J. Appl. Phys., 1992, 71, p. 2679 10.1063/1.351041 0021-8979
    • (1992) J. Appl. Phys. , vol.71 , pp. 2679
    • Georgakilas, A.1    Panayotatos, P.2    Stoemenos, J.3    Mourrain, J.-L.4    Christou, A.5
  • 5
    • 0021479789 scopus 로고
    • AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate
    • 10.1063/1.95273 0003-6951
    • Windhorn, T.H., Metze, G.M., Tsaur, B.Y., and Fan, J.C.: ' AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate ', Appl. Phys. Lett., 1984, 45, p. 309 10.1063/1.95273 0003-6951
    • (1984) Appl. Phys. Lett. , vol.45 , pp. 309
    • Windhorn, T.H.1    Metze, G.M.2    Tsaur, B.Y.3    Fan, J.C.4
  • 7
    • 0347595657 scopus 로고
    • 1-x As-GaAs vertical-cavity surface-emitting laser grown on Si substrate
    • 10.1063/1.102698 0003-6951
    • 1-x As-GaAs vertical-cavity surface-emitting laser grown on Si substrate ', Appl. Phys. Lett., 1990, 56, p. 740 10.1063/1.102698 0003-6951
    • (1990) Appl. Phys. Lett. , vol.56 , pp. 740
    • Deppe, D.G.1    Chand, N.2    Van Der Ziel, J.P.3    Zydzik, G.J.4
  • 10
    • 33746211194 scopus 로고    scopus 로고
    • Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy
    • 10.1063/1.2209068 0021-8979
    • Kwon, O., Boeckl, J.J., Lee, M.L., Pitera, A.J., Fitzgerald, E.A., and Ringel, S.A.: ' Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy ', J. Appl. Phys., 2006, 100, p. 013103 10.1063/1.2209068 0021-8979
    • (2006) J. Appl. Phys. , vol.100 , pp. 013103
    • Kwon, O.1    Boeckl, J.J.2    Lee, M.L.3    Pitera, A.J.4    Fitzgerald, E.A.5    Ringel, S.A.6
  • 11
    • 0037249861 scopus 로고    scopus 로고
    • Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers
    • 10.1063/1.1525865 0021-8979
    • Groenert, M.E., Leitz, C.W., Pitera, A.J., Yang, V., Lee, H., Ram, R.J., and Fitzgerald, E.A.: ' Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers ', J. Appl. Phys., 2003, 93, p. 362 10.1063/1.1525865 0021-8979
    • (2003) J. Appl. Phys. , vol.93 , pp. 362
    • Groenert, M.E.1    Leitz, C.W.2    Pitera, A.J.3    Yang, V.4    Lee, H.5    Ram, R.J.6    Fitzgerald, E.A.7
  • 13
  • 16
    • 0001733413 scopus 로고    scopus 로고
    • Fabrication of arrays of large step-free regions on Si(001)
    • 10.1063/1.117422 0003-6951
    • Tanaka, S., Umbach, C.C., Blakely, J.M., Tromp, R.M., and Mankos, M.: ' Fabrication of arrays of large step-free regions on Si(001) ', Appl. Phys. Lett., 1996, 69, p. 1235 10.1063/1.117422 0003-6951
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 1235
    • Tanaka, S.1    Umbach, C.C.2    Blakely, J.M.3    Tromp, R.M.4    Mankos, M.5
  • 17
    • 0035809527 scopus 로고    scopus 로고
    • A growth method for creating arrays of atomically flat mesas on silicon
    • 10.1063/1.1352656 0003-6951
    • Lee, D., Blakely, J.M., Schroeder, T.W., and Engstrom, J.R.: ' A growth method for creating arrays of atomically flat mesas on silicon ', Appl. Phys. Lett., 2001, 78, p. 1349 10.1063/1.1352656 0003-6951
    • (2001) Appl. Phys. Lett. , vol.78 , pp. 1349
    • Lee, D.1    Blakely, J.M.2    Schroeder, T.W.3    Engstrom, J.R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.