-
2
-
-
5244286914
-
Heteroepitaxy on silicon II
-
Fan, J.C.C., Phillips, J.M., and Tasur, B.Y.: ' Heteroepitaxy on silicon II ', Proc MRS Symp., 1987, 91
-
(1987)
Proc MRS Symp.
, vol.91
-
-
Fan, J.C.C.1
Phillips, J.M.2
Tasur, B.Y.3
-
3
-
-
0041900583
-
Heteroepitaxy on silicon: Fundamentals, structure and devices
-
Choi, H.K., Hull, R., Ishiwara, H., and Nemanich, R.J.: ' Heteroepitaxy on silicon: fundamentals, structure and devices ', Proc. MRS Symp., 1988, 116
-
(1988)
Proc. MRS Symp.
, vol.116
-
-
Choi, H.K.1
Hull, R.2
Ishiwara, H.3
Nemanich, R.J.4
-
4
-
-
0000195254
-
Achievements and limitations in optimized GaAs films grown on Si by molecular-beam epitaxy
-
10.1063/1.351041 0021-8979
-
Georgakilas, A., Panayotatos, P., Stoemenos, J., Mourrain, J.-L., and Christou, A.: ' Achievements and limitations in optimized GaAs films grown on Si by molecular-beam epitaxy ', J. Appl. Phys., 1992, 71, p. 2679 10.1063/1.351041 0021-8979
-
(1992)
J. Appl. Phys.
, vol.71
, pp. 2679
-
-
Georgakilas, A.1
Panayotatos, P.2
Stoemenos, J.3
Mourrain, J.-L.4
Christou, A.5
-
5
-
-
0021479789
-
AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate
-
10.1063/1.95273 0003-6951
-
Windhorn, T.H., Metze, G.M., Tsaur, B.Y., and Fan, J.C.: ' AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate ', Appl. Phys. Lett., 1984, 45, p. 309 10.1063/1.95273 0003-6951
-
(1984)
Appl. Phys. Lett.
, vol.45
, pp. 309
-
-
Windhorn, T.H.1
Metze, G.M.2
Tsaur, B.Y.3
Fan, J.C.4
-
6
-
-
0010952913
-
1-xAs-GaAs quantum well heterostructure lasers grown on Si
-
10.1063/1.98371 0003-6951
-
1-xAs-GaAs quantum well heterostructure lasers grown on Si ', Appl. Phys. Lett., 1987, 51, p. 637 10.1063/1.98371 0003-6951
-
(1987)
Appl. Phys. Lett.
, vol.51
, pp. 637
-
-
Deppe, D.G.1
Holonyak Jr., N.2
Nam, D.W.3
Hsieh, K.C.4
Jackson, G.S.5
Matyi, R.J.6
Shichiujo, H.7
Epler, J.E.8
Chung, H.F.9
-
7
-
-
0347595657
-
1-x As-GaAs vertical-cavity surface-emitting laser grown on Si substrate
-
10.1063/1.102698 0003-6951
-
1-x As-GaAs vertical-cavity surface-emitting laser grown on Si substrate ', Appl. Phys. Lett., 1990, 56, p. 740 10.1063/1.102698 0003-6951
-
(1990)
Appl. Phys. Lett.
, vol.56
, pp. 740
-
-
Deppe, D.G.1
Chand, N.2
Van Der Ziel, J.P.3
Zydzik, G.J.4
-
8
-
-
0000139837
-
0.6As quantum-dot lasers grown on Si substrates
-
10.1063/1.123548 0003-6951
-
0.6As quantum-dot lasers grown on Si substrates ', Appl. Phys. Lett., 1999, 74, p. 1355 10.1063/1.123548 0003-6951
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 1355
-
-
Linder, K.K.1
Phillips, J.2
Qasaimeh, O.3
Liu, X.F.4
Krishna, S.5
Bhattacharya, P.6
Jiang, J.C.7
-
9
-
-
33745031332
-
Raman-based silicon photonics
-
10.1109/JSTQE.2006.872708 1077-260X
-
Jalali, B., Raghunathan, V., Dimitropoulos, D., and Boyraz, O.: ' Raman-based silicon photonics ', IEEE J. Sel. Top. Quantum Electron, 2006, 12, p. 412 10.1109/JSTQE.2006.872708 1077-260X
-
(2006)
IEEE J. Sel. Top. Quantum Electron
, vol.12
, pp. 412
-
-
Jalali, B.1
Raghunathan, V.2
Dimitropoulos, D.3
Boyraz, O.4
-
10
-
-
33746211194
-
Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy
-
10.1063/1.2209068 0021-8979
-
Kwon, O., Boeckl, J.J., Lee, M.L., Pitera, A.J., Fitzgerald, E.A., and Ringel, S.A.: ' Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy ', J. Appl. Phys., 2006, 100, p. 013103 10.1063/1.2209068 0021-8979
-
(2006)
J. Appl. Phys.
, vol.100
, pp. 013103
-
-
Kwon, O.1
Boeckl, J.J.2
Lee, M.L.3
Pitera, A.J.4
Fitzgerald, E.A.5
Ringel, S.A.6
-
11
-
-
0037249861
-
Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers
-
10.1063/1.1525865 0021-8979
-
Groenert, M.E., Leitz, C.W., Pitera, A.J., Yang, V., Lee, H., Ram, R.J., and Fitzgerald, E.A.: ' Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers ', J. Appl. Phys., 2003, 93, p. 362 10.1063/1.1525865 0021-8979
-
(2003)
J. Appl. Phys.
, vol.93
, pp. 362
-
-
Groenert, M.E.1
Leitz, C.W.2
Pitera, A.J.3
Yang, V.4
Lee, H.5
Ram, R.J.6
Fitzgerald, E.A.7
-
12
-
-
22944438437
-
0.5As quantum dot laser on silicon
-
10.1049/el:20051558 0013-5194
-
0.5As quantum dot laser on silicon ', Electron. Lett., 2005, 41, p. 742-744 10.1049/el:20051558 0013-5194
-
(2005)
Electron. Lett.
, vol.41
, pp. 742-744
-
-
Mi, Z.1
Bhattacharya, P.2
Yang, J.3
Pipe, K.P.4
-
13
-
-
33646371480
-
A continuous-wave hybrid AlGaInAs-silicon evanescent laser
-
10.1109/LPT.2006.874690 1041-1135
-
Fang, A.W., Park, H., Jones, R., Cohen, O., Paniccia, M.J., and Bowers, J.E.: ' A continuous-wave hybrid AlGaInAs-silicon evanescent laser ', IEEE Photonics Technol. Lett., 2006, 18, p. 1143 10.1109/LPT.2006.874690 1041-1135
-
(2006)
IEEE Photonics Technol. Lett.
, vol.18
, pp. 1143
-
-
Fang, A.W.1
Park, H.2
Jones, R.3
Cohen, O.4
Paniccia, M.J.5
Bowers, J.E.6
-
14
-
-
18744407598
-
Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on a Si(100) substrate
-
10.1049/el:20050564 0013-5194
-
Balakrishnan, G., Huang, S.H., Khoshakhlagh, A., Hill, P., Amtout, A., Krishna, S., Donati, G.P., Dawson, L.R., and Huffaker, D.L.: ' Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on a Si(100) substrate ', Electron. Lett., 2005, 41, p. 531 10.1049/el:20050564 0013-5194
-
(2005)
Electron. Lett.
, vol.41
, pp. 531
-
-
Balakrishnan, G.1
Huang, S.H.2
Khoshakhlagh, A.3
Hill, P.4
Amtout, A.5
Krishna, S.6
Donati, G.P.7
Dawson, L.R.8
Huffaker, D.L.9
-
15
-
-
33645229782
-
Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on a Si(100) substrate
-
10.1049/el:20064286 0013-5194
-
Balakrishnan, G., Huang, S.H., Khoshakhlagh, A., Jallipalli, A., Rotella, P., Amtout, A., Krishna, S., Haines, C.P., Dawson, L.R., and Huffaker, D.L.: ' Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on a Si(100) substrate ', Electron. Lett., 2006, 42, p. 350 10.1049/el:20064286 0013-5194
-
(2006)
Electron. Lett.
, vol.42
, pp. 350
-
-
Balakrishnan, G.1
Huang, S.H.2
Khoshakhlagh, A.3
Jallipalli, A.4
Rotella, P.5
Amtout, A.6
Krishna, S.7
Haines, C.P.8
Dawson, L.R.9
Huffaker, D.L.10
-
16
-
-
0001733413
-
Fabrication of arrays of large step-free regions on Si(001)
-
10.1063/1.117422 0003-6951
-
Tanaka, S., Umbach, C.C., Blakely, J.M., Tromp, R.M., and Mankos, M.: ' Fabrication of arrays of large step-free regions on Si(001) ', Appl. Phys. Lett., 1996, 69, p. 1235 10.1063/1.117422 0003-6951
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 1235
-
-
Tanaka, S.1
Umbach, C.C.2
Blakely, J.M.3
Tromp, R.M.4
Mankos, M.5
-
17
-
-
0035809527
-
A growth method for creating arrays of atomically flat mesas on silicon
-
10.1063/1.1352656 0003-6951
-
Lee, D., Blakely, J.M., Schroeder, T.W., and Engstrom, J.R.: ' A growth method for creating arrays of atomically flat mesas on silicon ', Appl. Phys. Lett., 2001, 78, p. 1349 10.1063/1.1352656 0003-6951
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 1349
-
-
Lee, D.1
Blakely, J.M.2
Schroeder, T.W.3
Engstrom, J.R.4
|