Nanolasers grown on silicon-based MOSFETs

Optics Express

Volumn 20, Issue 11, 2012, Pages 12171-12176

  Lu, Fanglu ^a   Tran, Thai Truong D ^a   Ko, Wai Son ^a   Ng, Kar Wei ^a   Chen, Roger ^a   Chang Hasnain, Connie ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; OPTICALLY PUMPED LASERS; SEMICONDUCTING GALLIUM ARSENIDE;

INDIUM GALLIUM ARSENIDE; LOW TEMPERATURES; METAL-OXIDE; MONOLITHICALLY INTEGRATED; MOSFETS; NANOLASERS; NANOPILLAR; PROOF OF CONCEPT; ROOM-TEMPERATURE OPERATION; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SILICON CHIP; SILICON-BASED;

MOSFET DEVICES;

GALLIUM; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; ORGANOARSENIC DERIVATIVE; SILICON;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; LASER; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR;

ARSENICALS; CRYSTALLIZATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; INDIUM; LASERS; NANOTECHNOLOGY; SILICON; TRANSISTORS, ELECTRONIC;

EID: 84861490504     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.012171     Document Type: Article

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