Quantum dot lasers: From promise to high-performance devices

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1625-1631

  Bhattacharya, P ^a   Mi, Z ^b   Yang, J ^a   Basu, D ^a   Saha, D ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b MCGILL UNIVERSITY   (Canada)

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

CRYSTAL GROWTH; LASERS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MONOLITHIC INTEGRATED CIRCUITS; NANOSTRUCTURES; OPTICAL WAVEGUIDES; QUANTUM CONFINEMENT; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SPIN DYNAMICS; THREE DIMENSIONAL;

A1. NANOSTRUCTURES; A3. MOLECULAR BEAM EPITAXY; ACTIVE MEDIAS; ACTIVE REGIONS; B2. SEMICONDUCTING III-V MATERIALS; B3. LASER DIODES; CARRIER DYNAMICS; EMISSION WAVELENGTHS; GAAS; GUIDED WAVES; HIGH-PERFORMANCE DEVICES; LASER OPERATIONS; MODULATION BANDWIDTHS; MONOLITHIC INTEGRATIONS; QUANTUM DOT LASERS; QUANTUM DOT LAYERS; QUANTUM DOTS; ROOM-TEMPERATURE OPERATIONS; SELF-ORGANIZED; SILICON SUBSTRATES; SPIN INJECTIONS; SPIN-POLARIZED; STATE-OF-THE-ART PERFORMANCE; TUNNEL BARRIERS; ULTRA-LOW THRESHOLDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 63349086692     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.035     Document Type: Article

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