Monolithically integrated III-Sb-based laser diodes grown on miscut Si substrates

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 3, 2009, Pages 716-723

  Tatebayashi, Jun ^a   Jallipalli, Anitha ^a   Narayanan Kutty, Maya ^b   Huang, Shenghong ^b   Nunna, Kalyan ^a   Balakrishnan, Ganesh ^b   Ralph Dawson, L ^b   Huffaker, Diana L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

5 miscut; GaSb quantum well (QW); Interfacial misfit (IMF); Monolithic integration; Semiconductor lasers; Si photonics; Si substrates

Indexed keywords

GASB QUANTUM WELL (QW); INTERFACIAL MISFIT (IMF); MONOLITHIC INTEGRATION; SI PHOTONICS; SI SUBSTRATES;

DIODES; GALLIUM ALLOYS; LASERS; LATTICE MISMATCH; MONOLITHIC INTEGRATED CIRCUITS; QUANTUM WELL LASERS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

SUBSTRATES;

EID: 67651003284     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2015678     Document Type: Article

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