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Volumn 22, Issue 8, 2010, Pages 553-555

GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 µm at Room Temperature

Author keywords

Antimonide; GaInSb quantum well (QW); GaSb substrate; monolithic integration; semiconductor lasers; silicon substrate

Indexed keywords


EID: 85008054200     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/LPT.2010.2042591     Document Type: Article
Times cited : (65)

References (10)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.