SCOPUS 정보 검색 플랫폼

Volumn 108, Issue 11, 2010, Pages

Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy

(6) Hertenberger, S a Rudolph, D a Bichler, M a Finley, J J a Abstreiter, G a Koblmuller G a

a WALTER SCHOTTKY INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYST-FREE; COMPETITIVE GROWTH; DIFFUSION LIMITED; FULLY INTEGRATED; GROWTH REGIME; GROWTH STAGES; GROWTH TIME; HIGH YIELD; HOLE PATTERNS; II-IV SEMICONDUCTORS; INAS; INTER-WIRE DISTANCES; NANOMASKS; NANOWIRE ARRAYS; NON-CATALYTIC; ORDERED NANOWIRES; ROCKING CURVE WIDTH; SELECTIVE AREA GROWTH; SELECTIVE AREAS; SI (1 1 1); SI DEVICES; SITE SELECTIVE; SIZE VARIATION; SIZE-DEPENDENT EFFECT;

CATALYSTS; EPITAXIAL GROWTH; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; SILICON COMPOUNDS; X RAY DIFFRACTION;

GROWTH KINETICS;

EID: 78751485124 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3525610 Document Type: Article

Times cited : (139)

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